This paper describes an investigation into the fabrication of Al/ZnO:Al/CdS/CuInSe2/Mo/SLG thin-film solar cell. The absorber layer CuInSe2 films deposited by multisource elemental evaporation on Mo-coated soda lime glass at Tss=550¢J. Mo back metal contact and the front metal contact of Al were fabricated by magnetron sputtering. The ~800 Å CdS buffer layer on top of the CuInSe2 layer deposited by a chemical bath deposition (CBD) technique. The ZnO:Al window layer was grown by RF sputtering. Furthermore, we add Sb into CuInSe2 films to modify surface and grow smother surface of Cu-rich CuInSe2.
We have fabricated the ZnO/CdS/CuInSe2 thin-film solar cell with efficiency. The open circuit voltage (Voc) is 0.32 V, the short circuit current (Isc) is 1.62 mA and fill factor (F.F.) is 33 % in our device. The junction ideality factor is h=3.40, it¡¦s meant that recombination current is the dominant current. So, it¡¦s essential to improve the quality of absorber layer CuInSe2 films and control the growth condition.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0723104-170710 |
| Date | 23 July 2004 |
| Creators | Lee, Jun-Xian |
| Contributors | none, Bing-Hwait Hwang, Bae-Heng Tseng, Huey-Liang Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723104-170710 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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