Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:21703 |
| Date | January 2005 |
| Creators | Schmidt, Jan-Uwe |
| Publisher | Forschungszentrum Rossendorf |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:report, info:eu-repo/semantics/report, doc-type:Text |
| Source | Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-425 2005 |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | urn:nbn:de:bsz:d120-qucosa-237209, qucosa:22351 |
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