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Synthesis of silicon nanocrystal memories by sputter deposition

Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:21703
Date January 2005
CreatorsSchmidt, Jan-Uwe
PublisherForschungszentrum Rossendorf
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:report, info:eu-repo/semantics/report, doc-type:Text
SourceWissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-425 2005
Rightsinfo:eu-repo/semantics/openAccess
Relationurn:nbn:de:bsz:d120-qucosa-237209, qucosa:22351

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