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Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

Landau level splitting in a two-dimensional electron gas (2DEG) confined in an ultrapure GaN/AlGaN heterostructure grown by molecular beam epitaxy on bulk GaN is verified spectroscopically. The Landau level fan reconstructed from magneto-photoluminescence (PL) data yields an effective mass of 0.24m₀ for the 2D electrons. Narrow excitonic PL line widths < 100 μeV, an atomically flat surface of the layer stack, as well as the absence of the 2DEG in the dark environment, are important ancillary experimental findings while focusing on magneto-PL investigations of the heterostructure. Simultaneously recorded Shubnikov-de Haas and magneto-PL intensity oscillations under steady UV illumination exhibit an identical frequency and allow for two independent ways of determining the 2D density.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:81100
Date05 October 2022
CreatorsSchmult, Stefan, Solovyev, Victor V., Wirth, Steffen, Großer, Andreas, Mikolajick, Thomas, Kukushkin, Igor V.
PublisherAIP Publishing
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation2166-2746, https://doi.org/10.1116/1.5088927, info:eu-repo/grantAgreement/Bundesministerium für Bildung und Forschung/Mikroelektronik. Vertrauenswürdig und nachhaltig. Für Deutschland und Europa/16ES0145K//Entwicklung von Zwei-Schicht dotierten GaN-Substraten und vertikalen Hoch-Volt-Transistoren/ZweiGaN

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