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Memory Effect Analysis and Power Combining Design of Power Amplifiers

This thesis consists of two parts. Part one presents a design of class-AB power amplifier in 0.15£gm pHEMT process, and establishes a nonlinear model with memory effects for the power amplifier using Volterra series. To observe the memory effects, two-tone continuous wave signals have been applied to the model to predict the phase variation between IM3H and IM3L as a function of tone spacing. In the meanwhile, a time-domain measurement technique for the third-order intermodulation responses using a digital storage oscilloscope has been developed to verify the modeled predictions on IM3H and IM3L. Comparison between modeled and measured results shows good agreement. Part two of this thesis is to study the CMOS power-combining techniques. At first, the pros and cons between series and parallel combining transformers are discussed. Then, a design of class-E power amplifier using a pair of parallel combining transformers for power combining is presented. Both simulated and measured results show that the presented Class-E power amplifier has a high power-added efficiency.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0712110-181038
Date12 July 2010
CreatorsHuang, Pin-Chiang
ContributorsJian-Ming Wu, Chie-In Lee, Sheng-Fu Chang, Tzyy-Sheng Horng, Huey-Ru Chuang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712110-181038
Rightsnot_available, Copyright information available at source archive

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