n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:12474 |
| Date | January 2014 |
| Creators | von Wenckstern, Holger, Splith, Daniel Thomas, Schmidt, Florian, Grundmann, Marius, Bierwagen, Oliver, Speck, James S. |
| Contributors | Universität Leipzig, Paul-Drude-Institut für Festkörperelektronik, University of California |
| Publisher | AIP Publ. |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Source | APL Materials 2, 046104 (2014) doi: 10.1063/1.4870536 |
| Rights | info:eu-repo/semantics/openAccess |
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