A novel structure related to Seperation by Implanted Oxygen (SIMOX) of NiSi2/SiO2/Si is studied for two primary reasons: the importance of metal silicide and insulating oxide in IC devices and the difficulty of direct growth of crystalline silicide on amorphous substrates.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc798205 |
| Date | 05 1900 |
| Creators | Yang, Hong |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | Text |
| Rights | Public, Copyright, Copyright is held by the author, unless otherwise noted. All rights |
Page generated in 0.0018 seconds