Approved for public release, distribution is unlimited / In this thesis, SiN films grown on Si substrates were characterized using Fourier Transform Infrared (FTIR) spectroscopy. The stress in SiN films can be used to enhance of mobility of electrons and holes which increases the performance of metal-oxide-semiconductor (MOS) transistors. The samples used in this study were prepared by Applied Materials using chemical vapor deposition (CVD) technique with different growth parameters. The stress of the samples varied from 1.3 GPa compressive to 1 GPa tensile depending on the growth conditions employed. The FTIR measurement showed three distinct absorption peaks associated with Si-N, Si-H and N-H vibrational modes. The hydrogen was unintentionally incorporated into the SiN film during the CVD process due to its use as the carrier gas for the precursors. It was found from the FTIR data that the area under Si-H and N-H peaks (amount of bonds) varies in opposite directions when the film stress changes from compressive to tensile. In addition, the peak position of the Si-H absorption shifted to higher energy while the opposite was true for N-H as the stress changes from compressive to tensile. The strength and the position of the Si-N absorption peak were found to be relatively insensitive to the stress of the film. This indicates that the amount of Si-H and N-H bonds in the film is responsible for controlling the stress of the film. The use of quantum calculation of SiN molecules with different amount of Si-H and N-H bonds was used toward understanding the experimental absorption spectra. / Lieutenant, Mexican Navy
| Identifer | oai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1302 |
| Date | 12 1900 |
| Creators | Tellez, Galdino Mejia |
| Contributors | Karunasiri, Gamani, Brown, Ronald E., Naval Postgraduate School (U.S.)., Department of Physics |
| Publisher | Monterey California. Naval Postgraduate School |
| Source Sets | Naval Postgraduate School |
| Detected Language | English |
| Type | Thesis |
| Format | xii, 36 p. : col. ill., application/pdf |
| Rights | Copyright is reserved by the copyright owner |
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