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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Measurement of electron mobility in argon master project /

Mishouil, Massoud. January 1970 (has links)
Thesis (M.S.)--University of Michigan, 1970.
2

Electrical transport calculations for off-axis silicon

Wright, K. T. January 1986 (has links)
No description available.
3

Single electron transfer in reactions involving alkyl halides with nucleophiles

Pham, Tung Ngoc 05 1900 (has links)
No description available.
4

Theoretical studies of submicron gate length high electron mobility transistors

Park, Duke H. 12 1900 (has links)
No description available.
5

Current-voltage characteristics of organic semiconductors interfacial control between organic layers and electrodes /

Kondo, Takeshi. January 2007 (has links)
Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2008. / Dr. Marder Seth R, Committee Chair ; Dr. Kippelen Bernard, Committee Co-Chair ; Dr. Brďas Jean-Luc E, Committee Member ; Dr. Perry Joseph W, Committee Member ; Dr. Srinivasarao Mohan, Committee Member.
6

Low energy electron collisions with some gaseous hydrides and deuterides

Millican, P. G. January 1984 (has links)
No description available.
7

A study of the differential cross-section and analyzing powers of the pp-->[pi]+d reaction at intermediate energies

Giles, Gordon Lewis January 1985 (has links)
The polarized and unpolarized differential cross-sections and the analyzing power angular distributions of the pp→π⁺ d reaction have been measured to a statistical precision of better than one percent over several incident proton beam energies between 350 and 500 MeV for center-of-mass angles from 20° to 150°. The unpolarized differential cross-sections were measured at 350, 375, 425, and 475 MeV with unpolarized incident beams. The polarized differential cross-sections and analyzing powers were measured at 375, 450, and 498 MeV using polarized incident beams. Angular distributions of the unpolarized and polarized differential cross-sections are expanded into Legendre and Associated Legendre polynomial series respectively, and the ai°° and biⁿ° expansion coefficients fit to the respective measurements. The resulting coefficients are compared with existing data and recent theoretical predictions. The observation of significant non-zero a₆°° coefficent is interpreted as indication of a significant contribution from the ¹G₄ N-N partial wave channel at energies as low as 498 MeV. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
8

The epitaxial layer design of HEMTs

Morton, Christopher Gordon January 1994 (has links)
No description available.
9

Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy

Triplett, Gregory Edward, January 2004 (has links) (PDF)
Thesis (Ph. D.)--School of Electrical and Computer Engineering, Georgia Institute of Technology, 2004. Directed by Gary S. May. / Includes bibliographical references (leaves 109-113).
10

Electron mobilities in binary rare gas mixtures

Leung, Ki Y. January 1990 (has links)
This thesis presents a detailed study of the composition dependence of the thermal and transient mobility of electrons in binary rare gas mixtures. The time independent electron real mobility in binary inert gas mixtures is calculated versus mole fraction for different electric field strengths. The deviations from the linear variation of the reciprocal of the mobility of the mixture with mole fraction, that is from Blanc's law, is determined and explained in detail. Very large deviations from the linear behavior were calculated for several binary mixtures at specific electric strengths, in particular for He-Xe mixtures. An interesting effect was observed whereby the electron mobility in He-Xe mixtures, for particular compositions and electron field strength could be greater than in pure He or less than in pure Xe. The time dependent electron real mobility and the corresponding relaxation time, in particular for He-Ar and He-Ne mixtures are reported for a wide range of concentrations, field strengths (d.c. electric field), and frequencies (microwave electric field). For a He-Ar mixture, the time dependent electron mobility is strongly influenced by the Ramsauer-Townsend minimum and leads to the occurrence of an overshoot and a negative mobility in the transient mobility. For He-Ne, a mixture without the Ramsauer-Townsend minimum, the transient mobility increases monotonically towards the thermal value. The energy thermal relaxation times 1/Pτ for He-Ne, and Ne-Xe mixtures are calculated so as to find out the validity of the linear relationship between the 1/Pτ of the mixture and mole fraction. A Quadrature Discretization Method of solution of the time dependent Boltzmann-Fokker-Planck equation for electrons in binary inert gas mixture is employed in the study of the time dependent electron real mobility. The solution of the Fokker-Planck equation is based on the expansion of the solution in the eigenfunctions of the Fokker-Planck operator. / Science, Faculty of / Chemistry, Department of / Graduate

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