The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simulations. Chapter 4 assesses the reliability of SiGe HBTs in extreme temperature environments
by way of comprehensive experiments and MEDICI simulations. A comparison of the device
lifetimes for reverse-EB stress and mixed-mode stress indicates different damage mechanisms
govern these phenomena. The thesis concludes with a summary of the project and suggestions for
future research in chapter 5.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/14647 |
| Date | 10 January 2007 |
| Creators | Zhu, Chendong |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Dissertation |
Page generated in 0.0019 seconds