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Determination of the Band Gap Bowing Parameter of A1xGa1-xN with Contactless Electroreflectance

Contactless electroreflectance (CER), a modulation spectroscopy (MS) technique, has been used to study the A and C exciton transitions in A1xGa1-xN layers for a composition range of 0 ≤ x ≤ 0.48 at room temperature. Taking the entire composition range (0 ≤ x ≤ 1) into account by incorporating a previously reported band gap energy for AlN, the dependence of the A-exciton transition on composition showed a downward bowing from linearity. A bowing parameter of b = 1.7 eV was found. Analysis of the lower composition range 0 ≤ x ≤ 0.48 resulted in a linear fit, as did the trend for the detectable C exciton transitions. The slope of the linear trendlines for the A and C exciton were practically the same.

Identiferoai:union.ndltd.org:vcu.edu/oai:scholarscompass.vcu.edu:etd-2001
Date01 January 2006
CreatorsMcGlinchey, Laura C.
PublisherVCU Scholars Compass
Source SetsVirginia Commonwealth University
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceTheses and Dissertations
Rights© The Author

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