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A Low Temperature Study of the N-Channel MOS FET

Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise. / No abstract included. / Thesis / Master of Engineering (MEngr)

Identiferoai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/17433
Date05 1900
CreatorsCizmar , Edward S.
ContributorsChisholm, S. H., Electrical Engineering
Source SetsMcMaster University
LanguageEnglish
Detected LanguageEnglish
TypeThesis

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