Synthetic diamond thin films have potential for fabricating high-temperature semiconducting and optical devices because of its extraordinary properties. In this work, a microwave plasma chemical vapor deposition system has been setup. A two-steps deposition process will be applied for the growth of boron-doped diamond on silicon and on porous silicon. The effects of temperature, microwave power and of doping concentration of B2O3 have been studied by varying the growth parameters. The doping source of B2O3 solved in C2H5OH is applied with carrying gas of Ar. To vary the concentration of boron with the flow of Ar is controlled mixing into a reaction gas of CH4 and H2 mixture. Polycrystalline diamond thin films are examined by Raman, XRD and FTIR. In the SEM photograph a nano-wires structure has been found for higher doping of B2O3. A higher temperature the growth rate of the boron-doped diamond films will increase and the shape of crystallites will tend to polycrystalline. The diamond growth is in multi steps and the mechanism of deposition will change when the boron-doped diamond film grows up to a critical thickness. In this work a smooth diamond film was successfully grown on porous silicon without the step of nucleation.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0627103-185137 |
| Date | 27 June 2003 |
| Creators | Chuang, Yao-Li |
| Contributors | Ting-Chang Chang, Tai-Fa Young, Herng-Yih Weng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627103-185137 |
| Rights | off_campus_withheld, Copyright information available at source archive |
Page generated in 0.0015 seconds