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Baseband analog circuits in deep-submicron cmos technologies targeted for mobile multimedia

Three main analog circuit building blocks that are important for a mixed-signal
system are investigated in this work. New building blocks with emphasis on power
efficiency and compatibility with deep-submicron technology are proposed and
experimental results from prototype integrated circuits are presented.
Firstly, a 1.1GHz, 5th order, active-LC, Butterworth wideband equalizer that
controls inter-symbol interference and provides anti-alias filtering for the subsequent
analog to digital converter is presented. The equalizer design is based on a new series
LC resonator biquad whose power efficiency is analytically shown to be better than a
conventional Gm-C biquad. A prototype equalizer is fabricated in a standard 0.18μm
CMOS technology. It is experimentally verified to achieve an equalization gain
programmable over a 0-23dB range, 47dB SNR and -48dB IM3 while consuming 72mW
of power. This corresponds to more than 7 times improvement in power efficiency over
conventional Gm-C equalizers.
Secondly, a load capacitance aware compensation for 3-stage amplifiers is
presented. A class-AB 16W headphone driver designed using this scheme in 130nm technology is experimentally shown to handle 1pF to 22nF capacitive load while
consuming as low as 1.2mW of quiescent power. It can deliver a maximum RMS power
of 20mW to the load with -84.8dB THD and 92dB peak SNR, and it occupies a small
area of 0.1mm2. The power consumption is reduced by about 10 times compared to
drivers that can support such a wide range of capacitive loads.
Thirdly, a novel approach to design of ADC in deep-submicron technology is
described. The presented technique enables the usage of time-to-digital converter (TDC)
in a delta-sigma modulator in a manner that takes advantage of its high timing precision
while noise-shaping the error due to its limited time resolution. A prototype ADC
designed based on this deep-submicron technology friendly architecture was fabricated
in a 65nm digital CMOS technology. The ADC is experimentally shown to achieve
68dB dynamic range in 20MHz signal bandwidth while consuming 10.5mW of power. It
is projected to reduce power and improve speed with technology scaling.

Identiferoai:union.ndltd.org:tamu.edu/oai:repository.tamu.edu:1969.1/ETD-TAMU-2947
Date15 May 2009
CreatorsDhanasekaran, Vijayakumar
ContributorsSanchez-Sinencio, Edgar, Silva-Martinez, Jose
Source SetsTexas A and M University
Languageen_US
Detected LanguageEnglish
TypeBook, Thesis, Electronic Dissertation, text
Formatelectronic, application/pdf, born digital

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