Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxTe (HgCdTe) (0.20<x<0.32) and InSb both in the presence of CO2 laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap Eg which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependence of the Hall coefficient and the magnetic field positions of the magnetophonon extrema from which their x-values were determined. The quality of the magnetophonon spectra is also shown to be related to the inhomogeneity Ax of the HgCdTe samples.
One-photon magneto-absorption (OPMA) spectra have been obtained for x ~ 0.2 samples of p-HgCdTe thin films and n-HgCdTe bulk samples. Analysis of the OPMA transition energies allows the x-value to be determined to within « ±0.001. A method is also discussed which can be used to estimate the sample inhomogeneity Ax. Nonlinear optical properties of semiconductors are not only scientifically interesting to study, but are also proving to be technologically important as various nonlinear optical devices are being developed. One of the most valuable nonlinear optical characterization method uses twophoton absorption (TPA). Two techniques using TPA processes were developed and used to measure the cut-off wavelength of several different samples of HgCdTe (x ~ 0.3) from which x-values were determined to within «± 0.0005. Intensity and temperature dependent measurements on impurity and TPA processes have also been carried out and the results are compared with rate equations describing the photo-excited carrier dynamics. These results have yielded important information about the optical and material properties of HgCdTe such as the detection of impurity and trapping levels, TPA coefficients, carrier lifetimes, and recombination mechanisms. TPA and impurity absorption studies were also carried out on n— and p—InSb in order to obtain information about impurity levels, carrier lifetimes, and recombination mechanisms.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc330622 |
| Date | 05 1900 |
| Creators | McClure, Stephen Warren |
| Contributors | Seiler, David G., Redding, Rogers W., Van Stryland, Eric W., Kobe, Donald Holm, Mackey, H. J. |
| Publisher | North Texas State University |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | ix, 422 leaves : ill., Text |
| Rights | Public, McClure, Stephen Warren, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved. |
Page generated in 0.0015 seconds