InP obtained by metal-organic vapor phase epitaxy, with properties similar to GaAs, shows mobilities approaching the theoretical maxima at low temperatures. However, the corresponding values remain abnormally low at room temperature where a pronounced electronic excitation to the conduction band is observed simultaneously. This reduction of the mobility is attributed to the presence of deep centers that are electrically inactive at low temperatures but become excited when the temperature increases. A model based on an iterative solution to the Boltzmann equation and accounting for the usual scattering mechanisms, including inelastic interactions, is able to explain the data perfectly and shows that a very high mobility at low temperature is not a sufficient measure of the purity for this material. The binding energy of the deep centers depends on the organo-metalic source used for the growth. This links the solution of this problem to the purification of the chemicals. Depletion effects at the interfaces did not appear to be significant. (Abstract shortened by UMI.)

In the framework of the two-band (Dirac) model, we analyze the electronic structure of nanoscale systems, based on narrow-gap semiconductors of Pb,_xSnx (Se, S) type. Themain attention is paid to the influence of properties of the surface, encoded in appropriate boundary conditions, on the size-quantized spectrum. From this point of view we consider two types of systems: spherical (quantum dots) and quasi one-dimensional (films).It is shown that the spectrum of the spherical quantum dot consists not only of usual size-quantized states, located above the gap edge, but also surface modes residing inside the gap. Such states manifest themselves in the far infrared part of the absorption spectrum, the measurement of which allows one to extract information about the dot surface.Next, we consider a film with the energy gap modulated in the <111> (growth) direction. It is shown that the spectrum of the infinite crystal possesses a supersymmetrical structure. The film boundaries, generally speaking, destroy the supersymmetry, i.e. size-quantized subbands turn out to be spin-split. However, there exists a class of boundary conditions that do not lift spin degeneracy. Physically, in this case there is no band mismatch at interfaces. Our central statement, therefore, consists of the following: even when the inversion symmetry is destroyed by the bulk inhomogeneity, the spin-splitting of the spectrum is a purely surface effect. This is illustrated on a simple example, when the energy gap varies linearly over the film width.Finally, we investigate the role of boundary conditions in the problem of scattering of spinor waves by a quantum dot. It is shown that the existence of surface states greatly modifies the scattering data; in particular, outgoing waves may turn out to be fully polarized. / Department of Physics and Astronomy

No description available.

Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxTe (HgCdTe) (0.20<x<0.32) and InSb both in the presence of CO2 laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap Eg which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependence of the Hall coefficient and the magnetic field positions of the magnetophonon extrema from which their x-values were determined. The quality of the magnetophonon spectra is also shown to be related to the inhomogeneity Ax of the HgCdTe samples. One-photon magneto-absorption (OPMA) spectra have been obtained for x ~ 0.2 samples of p-HgCdTe thin films and n-HgCdTe bulk samples. Analysis of the OPMA transition energies allows the x-value to be determined to within « ±0.001. A method is also discussed which can be used to estimate the sample inhomogeneity Ax. Nonlinear optical properties of semiconductors are not only scientifically interesting to study, but are also proving to be technologically important as various nonlinear optical devices are being developed. One of the most valuable nonlinear optical characterization method uses twophoton absorption (TPA). Two techniques using TPA processes were developed and used to measure the cut-off wavelength of several different samples of HgCdTe (x ~ 0.3) from which x-values were determined to within «± 0.0005. Intensity and temperature dependent measurements on impurity and TPA processes have also been carried out and the results are compared with rate equations describing the photo-excited carrier dynamics. These results have yielded important information about the optical and material properties of HgCdTe such as the detection of impurity and trapping levels, TPA coefficients, carrier lifetimes, and recombination mechanisms. TPA and impurity absorption studies were also carried out on n— and p—InSb in order to obtain information about impurity levels, carrier lifetimes, and recombination mechanisms.

With the retreating sources of carbon based fuels, thermoelectric materials can play an important role in the future of environmentally friendly power generators. Sb based framework have in some cases shown some promising properties as thermoelectric materials. The physical properties may be modified with doping or incorporation of new elements. Zn4Sb3 and Cd4Sb3 are structurally related with a Sb-based network and Zn/Cd occupying the rest of the positions. Both structures undergo order-disorder α–β transition of the Zn/Cd positions, at 254 K and ~355 K respectively. The previously ordered interstitial atoms become distributed in the structure and the two high temperature phases are isostructural (R-3c). Cd4Sb3 was synthesized from melt-quench, flux synthesis with Sn, Bi and In. The syntheses made with In resulted in interstitial-free β-Cd4Sb3 with the composition Cd11.7In1.5Sb10. This compound exhibits no phase transitions until decomposition. ZnSnSb2 and InSb both exhibit the cubic sphalerite structure. ZnSnSb2 is metallic and InSb narrow band-gap semiconductor. Attempts were made to fine-tune the electrical properties by probing the mutual solid solubility range. The formula [ZnSnSb2]x[2(InSb)]1-xSn4 and 0&lt;X&lt;1 with 0.1 increments for the whole composition range was used. Resistivity changes from semiconducting to metallic conduction between x=0.9 and x=0.8. In the attempt to dope Zn4Sb3 by In a novel metastable compound with the composition Zn9Sb6In2 was found. Another novel phase was discovered with the composition Zn5Sb4In2-δ (δ=0.15).  The two phases have the same Sb-framework with a CuAl2 structure. Zn and In arrangements fill the square antiprisms formed by the stacking of 32434 nets in anti configuration. The filling of the antiprisms in the two phases are different, in Zn9Sb6In2 the antiprisms have two filling arrangements, an In or Zn3 triangles. In Zn5Sb4In2-δ the antiprisms are filled with an In and a Zn that occupies a split position to form a hetero-atomic dimers.

The main aim of this work was to develop a method of screening HgCdTe materials for carrier concentration and mobility using Faraday rotation θ and absorption α. Faraday rotation provides N/m*2, where N is the carrier concentration and m* is the effective mass. Since m* was not known in HgCdTe, a Faraday rotation spectrometer was developed to systematically measure it as a function of temperature and Cd mole fraction. Effective masses in n-InSb, and n-GaAs were measured and compared with known values in the literature to validate the method. Mobility is proportional to θ/α. The proportionalities were determined in HgCdTe, n-InSb, and n-GaAs at infrared wavelengths. The dissertation consists of the preface, introduction, three chapters, summary and main conclusions, references, list of publications and abstract (in Lithuanian).

The main aim of this work was to develop a method of screening HgCdTe materials for carrier concentration and mobility using Faraday rotation θ and absorption α. Faraday rotation provides N/m*2, where N is the carrier concentration and m* is the effective mass. Since m* was not known in HgCdTe, a Faraday rotation spectrometer was developed to systematically measure it as a function of temperature and Cd mole fraction. Effective masses in n-InSb, and n-GaAs were measured and compared with known values in the literature to validate the method. Mobility is proportional to θ/α. The proportionalities were determined in HgCdTe, n-InSb, and n-GaAs at infrared wavelengths.

The goal of this project was to study some unexplored optical and magneto-optical properties of the newest member of III-V ferromagnetic structures, InMnSb, as well as InSb films and InSb/AlInSb quantum wells. The emphasis was on dynamical aspects such as charge and spin dynamics in order to address several important issues of the spin-related phenomena. The objectives in this project were to: 1) understand charge/spin dynamics in NGS with different confinement potentials, 2) study phenomena such as interband photo-galvanic effects, in order to generate spin polarized current, 3) probe the effect of magnetic impurities on the spin/charge dynamics. This thesis describes three experiments: detection and measurement of spin polarized photocurrents in InSb films and quantum wells arising from the circular photogalvanic effect, and measurements of the carrier and spin relaxation in InSb and InMnSb structures by magneto-optical Kerr effect and differential transmission. The samples for our studies have been provided by Prof. Heremans at Virginia Tech, Prof. Santos at the University of Oklahoma, and Prof. Furdyna at the University of Notre Dame. / Ph. D.

As the switching rates in electronic and optoelectronic devices are pushed to even higher frequencies, it is crucial to probe carrier dynamics in semiconductors on femtosecond timescales. Time resolved spectroscopy is an excellent tool to probe the relaxation dynamics of photoexcited carriers; where after the initial photoexcitation, the nonequilibrium population of electrons and holes relax by a series of scattering processes including carrier-carrier and carrier-phonon scattering. Probing carrier and spin relaxation dynamics in InAs and InSb based narrow-gap semiconductors is crucial to understand the different scattering mechanisms related to the systems. Similar studies in InSb quantum wells are also intriguing, especially for their scientifically unique features (such as small effective mass, large g-factor etc). Our time resolved techniques demonstrated tunability of carrier and spin dynamics which might be important for charge and spin based devices. The samples studied in this work were provided by the groups of Prof. Wessels (Northwestern University) and Prof. Santos (University of Oklahoma). Theoretical calculations were performed by the group of Prof. Stanton (University of Florida). The THz measurements were performed at Wright State University in collaboration with Prof. Jason Deibel. This work has been supported by the National Science Foundation through grants Career Award DMR-0846834, AFOSR Young Investigator Program 06NE231. A portion of this work was performed at the National High Magnetic Field Laboratory (in collaboration with Dr. Stephen McGill), which is supported by National Science Foundation Cooperative Agreement No. DMR-0654118, the State of Florida, and the U.S. Department of Energy. / Ph. D.

In recent years, spin relaxation, injection, and manipulation in semiconductors have attracted considerable interest because of several potential applications in "spintronic" devices and the necessity to understand and control spin-based phenomena. In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors (NGS). NGS based heterostructures are particularly interesting for spintronic applications due to their large spin-orbit coupling, which leads to considerable zero-field spin splitting. NGS are also candidates for electronic applications, such as high-speed and low-power microprocessors; as reported recently by Intel. Furthermore, as switching rates in electronic devices are pushed to even higher frequencies, it is important to understand dynamics in semiconductors such as NGS on femtosecond time-scales. In this thesis, time-resolved studies of magnetic and non-magnetic NGS using ultrafast-laser spectroscopy techniques such as pump-probe spectroscopy and magneto-optical Kerr/Faraday effect, are reported. Our samples include: InSb-based quantum wells with different confinement potentials; InMnSb films, the newest III-V ferromagnetic semiconductors; and InAs films. The samples for these studies have been provided by the groups of Prof. Santos at the University of Oklahoma, Prof. Furdyna at the University of Notre Dame, and Prof. Guido at Virginia Tech. The objectives in this thesis have been to: a) understand charge/spin dynamics in NGS with novel confinement potentials, b) probe the effect of magnetic impurities on the spin/charge dynamics, and c) develop concepts for spin based device applications. Several specific questions and concepts have been addressed including: the effect of large spin-orbit interaction in NGS on the dynamics, how large Rashba spin splitting in these materials affect the spin coherence life time, and carrier/spin dynamics in ferromagnetic semiconductor structures. / Ph. D.