This review presents recent research advances in measuring native point defects in ZnO
nanostructures, establishing how these defects affect nanoscale electronic properties, and developing
new techniques to manipulate these defects to control nano- and micro- wire electronic properties.
From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active
native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor
nanostructures. These defects within nanowires and at their metal interfaces can dominate
electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy
beams, as well as applied electrical fields. Non-uniform defect distributions are common among
semiconductors, and their effects are magnified in semiconductor nanostructures so that their
electronic effects are significant. The ability to measure native point defects directly on a nanoscale
and manipulate their spatial distributions by multiple techniques presents exciting possibilities for
future ZnO nanoscale electronics.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:84643 |
| Date | 06 April 2023 |
| Creators | Brillson, Leonard, Cox, Jonathan, Gao, Hantian, Foster, Geoffrey, Ruane, William, Jarjour, Alexander, Allen, Martin, Look, David, von Wenckstern, Holger, Grundmann, Marius |
| Publisher | MDPI |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 1996-1944, 2242 |
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