3D VLSI with a CoolCube TM process allows vertically stacking several layers of devices with a unique connecting via density above a million/mm2. The thermal budget allowed to process the top transistor is currently limited by NiPt silicide stability of the bottom transistor. To extend the upper transistors thermal process window, Pre-Amorphization Implant (PAI) and Si-Capping were used to improve the stability of NiPt 15% on SiC:P and SiGe 30% :B accesses. While PAI enhances the silicide stability on SiC:P substrate from 600°C 2h to 700°C 2h, neither PAI nor Si-Capping improve silicide stability on SiGe 30% :B. To provide a solution for P accesses stability, NiCo 10% silicidation has been developed. Combined with PAI and Si-Capping, the germano-silicide offers a higher stability (up to 600°C 2h) than its NiPtSi 15% counterpart.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:ch1-qucosa-207112 |
| Date | 22 July 2016 |
| Creators | Deprat, Fabien, Nemouchi, F., Fenouillet-Beranger, C., Batude, P., Previtali, B., Danielou, M., Rodriguez, P., Favier, S., Fournier, C., Gergaud, P., Vinet, M. |
| Contributors | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
| Publisher | Universitätsbibliothek Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject |
| Format | application/pdf, text/plain, application/zip |
| Source | AMC 2015 – Advanced Metallization Conference |
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