Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performanceE

Description

Thesis (Ph. D)--Ohio State University, 2002. / Title from first page of PDF file. Document formatted into pages; contains xxx,198 p.: ill. (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 188-198).

Links & Downloads

1. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1038605384

Tags

Semiconductors. Nitrides.

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/51735524
Date	January 2002
Creators	Jessen, Gregg Huascar.
Source Sets	OCLC
Language	English
Detected Language	English
Source	Connect to this title online