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Time-resolved optical beam induced current mapping in InGaN LED

We have implemented the time-resolved technique at frequency domain on a laser scanning microscope to investigate light emitting diodes. Leds are not high-speed device, so we use e-o modulator to change its frequency of Laser and finish the experiment. In this way, temporal response of a device can be mapped at high spatial resolution. We are using a Ti : sapphire laser and a high frequency phase sensitive lock-in loop to achieve time-resolved the dynamics properties of the light emitting devices.Laser used to excite carriers in the depletion region detected form the contract signal for scanning imaging. We can observe the OBIC effect and measure the response time of light emitting devices.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0717108-220842
Date17 July 2008
CreatorsLin, Yu-fong
ContributorsCheng-Wen Ko, Fu -Jen Kao, Bae-Heng Tseng, Wood-Hi Cheng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717108-220842
Rightsunrestricted, Copyright information available at source archive

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