We have successfully implemented the time-resolved technique at frequency domain on a laser scanning microscope. The method is implemented via interfacing a lock-in amplifier with the laser scanning microscope and is used to investigate organic photonic devices (OPD). The available modalities include electroluminescence and optical beam induced current. In this way, temporal response of a device can be investigated at high spatial resolution. Despite of its now limited role in flat panel display, OPD presents as a versatile material with numerous potentials, with solar power panel as the most noted one recently. The investigation conducted enables us to better understand the fundamental dynamics of carriers unique to OPDs.

The techniques of optical beam induced current (OBIC) have found wide-spread applications in characterizing many semiconductor and optoelectronic devices. A two-photon confocal microscope is adapted for investigating the dynamics of light emitting devices through the contrast mechanisms of two-photon DC and radio frequency (RF) optical beam induced current (OBIC). For comparison, the 2p-OBIC technique detects the photocurrent signal by exciting the semiconductor sample with a pulsed laser that has a wavelength below the bandgap of the semiconductor. It has high accuracy and spatial resolution. We demonstrate that the bias on the devices (forward and reverse) strongly modifies the DC and RF OBIC signals. Finally we will discuss how to explain this result, and we will provide a program to show the phase distribution of GaP LED.

Optical beam induced current mapping has found wide-spread applications in charactering semiconductor devices and integrated circuitry. Conventionally a focused cw laser beam is employed to excite carriers in the depletion region that is subsequently detected to form the contrast signal for scanning imaging. Device defects that may quench the photo-generated carriers can then be easily revealed. However, such detection is static in nature and the dynamics behavior of a device remains unknown. In this study, we are using a pulsed laser with high repetition rate and a high frequency phase sensitive lock-in loop to achieve temporal resolution at sub-nanosecond. In this way, the temporal response at a selected position on the device can be characterized

In this study¡Awe apply the broad bandwidth and high energy pulse of ultrafast laser to experiment on RF OBIC and second harmonic generation. In this paper a novel method is presented for characterizing high frequency response and behavior of ultra high-speed photosensitive semiconductor devices and the set-up is capable of generating excitation at RF bandwidths of greater than 1.8 THz. In addition¡Athe collagen of dentine is able to generate the second harmonic in the ultraviolet region, so we develop a high performance transmission mode laser scanning microscope for obtaining SHG images of a tooth slice. We also study wavelength dependence and polarization dependence.

In this study we have successfully developed the techniques of time-resolved electro-luminescence (EL) and optical beam induced current (OBIC) microscopy for the mapping of photonic devices. We have applied the techniques to examine various photonic devices, including light emitting diodes (LED), organic light emitting diode (OLED), and coplanar waveguide (CPW) devices. The key development in time-resolved microscopy is the technique of modulation. By measuring the phase delay between the modulation source and the output signal, the response time of the observed devices can be extracted. In electro-luminescence mapping, the phase delay is measured between the applied sinusoidal voltage and the emitted EL, while in OBIC mapping the phase delay is measured between the modulated laser beam and the resulting photocurrent. The phase delay measurements are performed with a lock-in amplifier. In this way, large enhancement in signal-to-noise ratio can also be obtained. Additionally, the technique of varying scanning rate is also developed to synchronize the data acquisition between the LSM and the lock-in amplifier, a key enabling advancement in this thesis study.

We have implemented the time-resolved technique at frequency domain on a laser scanning microscope to investigate light emitting diodes. Leds are not high-speed device, so we use e-o modulator to change its frequency of Laser and finish the experiment. In this way, temporal response of a device can be mapped at high spatial resolution. We are using a Ti : sapphire laser and a high frequency phase sensitive lock-in loop to achieve time-resolved the dynamics properties of the light emitting devices.Laser used to excite carriers in the depletion region detected form the contract signal for scanning imaging. We can observe the OBIC effect and measure the response time of light emitting devices.

Le carbure de silicium (SiC) possède plusieurs propriétés exceptionnelles comme une large bande interdite, un champ électrique critique et une vitesse de saturation des porteurs élevée pour remplacer le silicium (Si) dans des domaines de fonctionnement jusque-là inaccessibles avec le Si. Un nombre important de démonstrateurs des composants de puissance en SiC faisant état de performances remarquables ainsi que la disponibilité commerciale des composants en SiC confirment la maturité de la filière SiC et montrent les progrès technologiques réalisés au cours des dernières années. Cependant, il existe peu d'études sur les coefficients d'ionisation du SiC, lesquels sont pourtant indispensables pour prévoir précisément la tenue en tension des composants de puissance en SiC. Ce travail contribue donc à mieux déterminer ces coefficients. Pour cela, un bon nombre de diodes spécialement conçues pour la détermination des coefficients d'ionisation du SiC par la technique OBIC (Optical Beam Induced Current) ont été réalisées sur différents wafers de SiC-4H et de SiC-6H, deux polytypes courant du SiC. Cette technique repose sur un faisceau de laser ultraviolet qui génère des paires électrons-trous dans la zone de charge d'espace d'une diode sous test. La mesure du courant résultant permet d'accéder aux coefficients d'ionisation. A partir des mesures OBIC sur les diodes réalisées, nous avons pu déduire les coefficients pour ces deux polytypes du SiC. Plus particulièrement, les coefficients d'ionisation du SiC-4H sont déterminés dans une large gamme de champ électrique grâce aux mesures sur les différents dopages. Les paramètres des coefficients déterminés dans ce travail peuvent être utilisés en conception de dispositifs haute tension pour prédire plus précisément l'efficacité de leur protection périphérique.

A polymer light-emitting electrochemical cell (LEC) is a solid-state polymer device operating according to in situ electrochemical doping and the formation of a light-emitting polymer p-n junction. This operating mechanism, however, has been the subject of much debate. Planar LECs with millimeter scale interelectrode spacings offer great advantages for directly observing the electrochemical doping process. Photoluminescence quenching and the formation of a light-emitting junction have been observed in planar polymer LECs, demonstrating the existence of electrochemical doping. The chemical potential difference between the p- and n-doped regions creates a built-in potential/electric field in the junction region, which can be probed by measuring the optical beam induced current (OBIC). This study utilizes a versatile and easy-to-use method of performing OBIC analysis. The OBIC and photoluminescence profiles of LECs have been simultaneously measured by scanning a focused light beam across large planar LECs that have been turned on and cooled to freeze the doping profile. The photoluminescence intensity undergoes a sharp transition between the p- and n-doped regions. The OBIC photocurrent is only observed in the transition region that is narrower than the width of the excitation beam, which is about 35 μm. The results depict a static planar polymer p-n junction with a built-in electric field pointing from n to p. The electrode interfaces do not produce a measurable photocurrent indicating ohmic contact. / Thesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2013-05-28 12:52:14.171

In this study, the characteristic properties of the ultrafast laser exhibit sufficiently in the application of RFOBIC and two-photon UV fluorescence. This laser can be used to measure photonic components with fast responding speed due to the ultrashort pulse and broad bandwidth which is RF bandwidths of greater than 1.8THz. we have demonstrated the use of a frequency-doubled femtosecond optical parametric oscillator in generating two-photon excitation that is equivalent to ultraviolet(UV) light with wavelength less than 300 nm. This capability allows observation of some amino acids and enables excitation that is only possible with wavelength in UVB range(290 nm-320 nm)

To mitigate the risk for devastating climate changes, there is an urgent need to change the energy production from the current fossil based to renewable sources. Solar cells will contribute to an increasing share of the future energy systems. Today silicon solar cells dominate the market but printed organic solar cells are promising alternatives in terms of cost, flexibility, possibilities for building integrations and energy payback times. Printing enables roll-to-roll processing that is quick and renders huge volumes. Thus, also characterization and quality control must be fast. Recent tests have been performed showing that a LED array with amplitude modulated LEDs can be used to provide photocurrent images of modules with series connected sub cells in-line during manufacturing. The purpose of this thesis work is to further evaluate and develop this LED array characterization technique focusing on contact methods and signal interpretation. Two modes were examined; a contact mode and a capacitive contact-less mode. Both modes gave comparable results and indicated strong variations in performance of sub cells in the measured modules. Other methods to address individual cells also showed similar behavior. However, by manually adding extra contact points, current-voltage curves could be measured on the individual sub cells in the modules. Extraction of photocurrents were similar, but the parallel resistances varied strongly between the cells in the module. Increasing the frequency of the LEDs resulted in less variations. Calculations indicated that this frequency dependence could be used to separate the photocurrent generation and parallel resistance in the sub cells.