We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4-
ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition
(oCVD). Current-voltage measurements reveal the formation of Schottky diodes that show good
thermal and temporal stability with rectification ratios of 10 7 and ideality factors of ∼1.2. In the frame
of a Schottky model, we identify a mean barrier height at the hybrid inorganic-organic interface of
1.28 eV, which is consistent with the difference between the work function of PEDOT and the electron
affinity of ZnO. The findings highlight the strength of oCVD to design high-quality hybrid PEDOT/
ZnO heterojunctions with possible applications in electronic and optoelectronic devices.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:85016 |
| Date | 27 April 2023 |
| Creators | Krieg, Linus, Zhang, Zhipeng, Splith, Daniel, von Wenckstern, Holger, Grundmann, Marius, Wang, Xiaoxue, Gleason, Karen K., Voss, Tobias |
| Publisher | IOP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 2632-959X, 010013 |
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