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Electrode/Organic Interfaces in Organic Optoelectronics

Organic semiconductors have the advantage over traditional inorganic semiconductors, such as Si or GaAs, in that they do not require perfect single crystal films to operate in real devices. Complicated multi-layer structures with nanometer scale thicknesses can thus be easily fabricated from organic materials using low-cost roll-to-roll manufacturing techniques. However, the discrete nature of organic semiconductors also implies that they typically contain almost no intrinsic charge carriers (i.e., electrons or holes), and thus act as insulators until electrical charges are injected into them. In electrical device applications this means that all of the holes and electrons within a device must be injected from the anode and cathode respectively. As a result, device stability, performance, and lifetime are greatly influenced by the interface between the organic materials and the electrode contacts. Despite the fundamental importance of the electrode/organic contacts, much of the basic physical understanding of these interfaces remains unclear. As a result, the current design of state-of-the-art organic optoelectronic devices tends to be based on trial and error experimentation, resulting in overly complicated structures that are less than optimal.
In the present thesis, various electrode/organic interfaces relevant to device applications are studied using a variety of different techniques, including photoelectron spectroscopy and the
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temperature dependent current-voltage characteristics of single carrier devices. The fundamental understanding gleaned from these studies has been used to develop new strategies for controlling the energy-level alignment at electrode/organic interfaces. A universal method for tuning the work function of electrode materials using a halogenated organic solvent and UV light has been developed. Application of this technique in organic light emitting diodes enabled the first highly simplified two-layer device with a state-of-the-art record breaking efficiency.

Identiferoai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/34052
Date13 December 2012
CreatorsHelander, Michael G.
ContributorsLu, Zhenghong
Source SetsUniversity of Toronto
Languageen_ca
Detected LanguageEnglish
TypeThesis

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