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Technology development and study of rapid thermal CVD high-K gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration : zirconium oxide, and hafnium oxide

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Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/12129
Date08 July 2011
CreatorsLee, Choong-ho
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works., Restricted

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