Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Description

This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide SiC
film growing from crystalline silicon Si due to the heterogeneous reaction with gaseous carbon
monoxide CO.

Links & Downloads

1. urn:nbn:de:bsz:15-qucosa2-317451
2. https://ul.qucosa.de/id/qucosa%3A31745
3. https://ul.qucosa.de/api/qucosa%3A31745/attachment/ATT-0/

Tags

info:eu-repo/classification/ddc/530

ddc:530

Additional Fields

Identifer	oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31745
Date	19 September 2018
Creators	Kukushkin, Sergey A., Osipov, Andrey V.
Source Sets	Hochschulschriftenserver (HSSS) der SLUB Dresden
Language	English
Detected Language	English
Type	info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rights	info:eu-repo/semantics/openAccess
Relation	47, urn:nbn:de:bsz:15-qucosa2-315695, qucosa:31569