We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the
growth temperature and post growth annealing times. High-temperature growth results in the highest
structural quality and highest electron mobility; the doping efficiency is limited by the dopant’s
solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier
densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C
and below have a free carrier density significantly above the solubility limit yielding the minimum
resistivity of ρmin=4.8×10−4 Ω cm for Mg0.05Zn0.95O: Al thin films grown on glass at 300 °C.
Annealing of these samples reduces the free carrier density and the absorption edge to values similar
to those of samples grown at high temperatures. The saturation of the free carrier density and
the optical bandgap at their high temperature growth/annealing values is explained by the thermal
creation of acceptor-like compensating defects in thermodynamic equilibrium.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31212 |
| Date | 11 August 2018 |
| Creators | Mavlonov, Abdurashid, Richter, Steffen, von Wenckstern, Holger, Schmidt-Grund, Rüdiger, Lorenz, Michael, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0021-8979, 1089-7550, 205703 |
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