Trotz der im Vergleich zu Silizium überragenden elektronischen Eigenschaften von Verbindungshalbleitern, ist die Leistung der daraus gefertigten elektrischen Bauelemente aufgrund der vorhandenen, die elektronischen Materialeigenschaften beeinflussenden Defekte nach wie vor begrenzt. Die vorliegende Arbeit trägt dazu bei, das bestehende ökonomische Interesse an einem besseren Verständnis der die Bauelementeleistung limitierenden Defekte zu befriedigen, indem sie die Auswirkungen dieser Defekte auf die elektronischen und optischen Materialeigenschaften von Indiumphosphid (InP) und Siliziumkarbid (SiC) aufzeigt. Zur Klärung der Effekte finden in der Arbeit sich ergänzende elektrische und optische Charakterisierungsmethoden Anwendung, von denen die meisten kontaktlos und zerstörungsfrei arbeiten und sich daher prinzipiell auch für Routineanalysen eignen. Die erzielten Ergebnisse bestätigen und ergänzen Literaturdaten zum Defektinventar in InP und SiC nutzbringend. So wird insbesondere das Potential der elektrischen Charakterisierung mittels MDP und MD-PICTS, welche in der Arbeit erstmals für die Defektcharakterisierung von InP und SiC eingesetzt wurden, nachgewiesen. Die experimentellen Studien werden dabei bedarfsorientiert durch eine theoretische Betrachtung des entsprechenden Signalentstehungsmechanismuses ergänzt.:1 Motivation
2 Theses
3 Compound semiconductors: structure and benefits
4 Growth of compound semiconductors
5 Structural defects in compound semiconductors
6 Defects and their impact on electronic material properties
7 Effect of annealing treatments on the properties of InP
8 Experimental details
9 Experimental results
10 Summary of the thesis
11 Conclusion and impact
12 Prospect of future work
13 Appendix - Theory of signal development
14 List of tables
15 List of figures
16 List of abbreviations and symbols
17 Eidesstattliche Erklärung - Declaration of academic honesty
18 Danksagung - Acknowledgment
19 Veröffetnlichungen - Publications
20 References / Although the electronic properties of compound semiconductors exceed those of Silicon, the performance of respective electronic devices still is limited. This is due to the presence of various growth-induced defects in compound semiconductors. In order to satisfy the economic demand of an improved insight into limiting defects this thesis contributes to a better understanding of material inherent defects in commonly used Indium Phosphide (InP) and Silicon Carbide (SiC) by revealing their effects on electronic and optical material properties. On that account various complementary electrical and optical characterization techniques have been applied to both materials. Most of these techniques are non-contacting and non-destructive. So, in principle they are qualified for routine application. Characterization results that are obtained with these techniques are shown to either confirm published results concerning defects in InP and SiC or beneficially complement them. Thus, in particular the potential of electrical characterization by MDP and MD-PICTS measurements is proofed. Both techniques have been applied for the first time for defect characterization of InP and SiC during these studies. The respective experiments are complemented by a theoretical consideration of the corresponding signal development mechanism in order to develop an explanation approach for occasionally occurring experimental imperfection also arising during silicon characterization from time to time.:1 Motivation
2 Theses
3 Compound semiconductors: structure and benefits
4 Growth of compound semiconductors
5 Structural defects in compound semiconductors
6 Defects and their impact on electronic material properties
7 Effect of annealing treatments on the properties of InP
8 Experimental details
9 Experimental results
10 Summary of the thesis
11 Conclusion and impact
12 Prospect of future work
13 Appendix - Theory of signal development
14 List of tables
15 List of figures
16 List of abbreviations and symbols
17 Eidesstattliche Erklärung - Declaration of academic honesty
18 Danksagung - Acknowledgment
19 Veröffetnlichungen - Publications
20 References
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:23028 |
| Date | 12 June 2015 |
| Creators | Anger, Sabrina |
| Contributors | Niklas, Jürgen R., Wellmann, Peter, TU Bergakademie Freiberg |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
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