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Inverstigation on Reliability of Poly-Silicon Thin-Film Transistor

The influence of grain boundary (GB) on stability of poly-silicon thin film transistor (TFT) have been investigated in this work. The work was supported by the National Science Council of the Republic of China and AUO. We used ac stress and dc stress conditions to stress different TFTs, and investigate the influence of grain boundary by use of electrical analysis. The SLS poly-Si TFT which does contain GB perpendicular to the channel direction owns the higher ability against dc stress and poorer ability against ac stress than the poly-Si TFT which does not contain GB. The physical mechanism for these results has been reasonably deduced by use of TFT device simulation tool (ise-tcad).

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0712105-162613
Date12 July 2005
CreatorsWeng, Chi-feng
ContributorsWang-Chuang Kuo, Tzyy-Ming Cheng, Po-Tsun Liu, Ying-Lang Wang, Ting-Chang Chang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712105-162613
Rightsnot_available, Copyright information available at source archive

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