This study investigated the behavior of porous silicon gas sensors under exposure to CO, NO, and NH3 gas at the part per million level. Parameters of interest in this study included the electrical, environmental, and chemi-resistive performance associated with various porous silicon morphologies. Based upon the variability of preliminary results, a gas pulsing method was combined with signal processing in order to analyze small impedance changes in an environment of substantial noise. With this technique, sensors could be effectively screened and characterized. Finally this method was combined with various post-treatments in order to improve the sensitivity and selectivity of individual sensors.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/4971 |
| Date | 04 May 2004 |
| Creators | DeBoer, John Raymond |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
| Format | 4360577 bytes, application/pdf |
Page generated in 0.0021 seconds