This paper deals with a method to additionally heat with switching losses in a classical power cycling test, as it is often used for power semiconductors.The fundamentals of testing, switching behavior, thermal and electrical characteristics of semiconductors are covered.The core of the work is the construction, start-up and solution of technical problems during the testing of the test stand. Another aspects are the measurement and software challenges in generating the pulse pattern and in evaluating the results. The last part of the work deals with the testing of different types of semiconductors, such as IGBTs and MOSFETs, which were also made of different materials, such as silicon and silicon carbide, and had different voltage classes.:Contents i
Symbols and Abbreviations iii
Introduction 1
1. Power Cycling Lifetime 2
1.1. Power Cycling-induced Ageing Mechanisms and Test Methods 2
1.1.1. Overview of Packaging Technologies and their Wear-out Failures 2
1.1.2. Failure Mechanisms in Power Modules and Discrete Devices 6
1.1.3. Basic Structure of a Test Bench for DC Power Cycling Tests 8
1.1.4. Modifications for SiC MOSFET Operation 12
1.1.5. Measurement Accuracy, Limits and Consequences for Test Evaluation 16
1.1.6. Thermal Resistance and Thermal Impedance Spectroscopy 18
1.2. Empirical Power Cycling Lifetime Models 21
2. Specific Limitations in Conditions for some Devices 27
3. Approaches of an Application-close Power Cycling Test 30
4. New Test Bench Concept with an adjustable part of switching losses 35
4.1. Basics for Switching 35
4.1.1. Active Clamping 38
4.1.2. Boosted Active Clamping 40
4.2. Repetitive Unclamped Inductive Switching 42
4.3. Test Bench Concept for Power Cycling Test with Turn-off Losses 44
4.4. Dimensioning of the Stray Inductance 47
4.4.1. Current Ripple and Attainable Switching Losses 51
4.5. Special Setup for Si and SiC MOSFETs 57
4.6. Measurement Algorithm and necessary Hardware 58
4.6.1. Measurement Hardware 58
4.6.2. Measurement Algorithm 60
4.6.3. Challenges during the Measurement 62
4.6.4. Current Source for Fast Regulation 66
5. Test Results with IGBTs 69
5.1. Modules with Baseplate 69
5.2. Modules without Baseplate 80
5.3. IGBTs in Discrete Housings 90
6. Test Results with MOSFETs 97
6.1. Low Voltage Si MOSFETs 97
6.2. SiC MOSFETs 106
7. Analysis of Si Low-voltage MOSFETs Results with FEM 107
8. Conclusion and Outlook 113
9. Acknowledgement 118
References 119
Appendix 136
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:73867 |
| Date | 10 March 2021 |
| Creators | Seidel, Peter |
| Contributors | Lutz, Josef, Bakran, Mark-Matthias, Technische Universität Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
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