This Ph.D. thesis carries out extensive and in-depth research on the packaging technology of silicon carbide (SiC) power modules, including new packaging structures, multi-physics modeling and optimal design methods for half-bridge power modules, manufacturing processes, and experimental validations.
A new packaging scheme, the Silver-Sintered Molybdenum (SSM) packaging, is proposed in this thesis. It contains a molybdenum (Mo) -based insulated-metal-substrate (IMS) structure, nano-silver sintering die-attachments, and planar interconnections. This technology has the potential to increase the operating temperature of SiC power modules to above 200 degrees, and can greatly improve their lifetime. These advantages are verified by active power cycling and passive temperature cycling simulations.
Analytical modeling methods for half-bridge power modules with the SSM packaging are also studied. A decoupled Fourier-based thermal model is introduced. This model considers the decoupling effect between different heat source regions and can give a three-dimensional analytical solution for the temperature field of a simplified half-bridge power module structure. In addition, based on the partial inductance model for rectangular busbars, an analytical stray inductance model for half-bridge power modules is also proposed. The accuracy of these two models is estimated by both numerical simulations and experiments.
With the proposed analytical models, an optimal design method for half-bridge power modules with the SSM packaging is proposed in this study, which uses the particle swarm optimization algorithm. This method is successfully applied in the design of a prototype power module and is able to minimize the stray inductance and volume while maintaining desired junction temperatures.
This thesis also introduces the manufacturing process of the prototype power module. Several new processes are proposed and validated, including a pressure-less nano-silver sintering process to bond SiC dies on Mo substrates, the formation of the Mo-based IMS structure, and the re-metallization of SiC dies. / Thesis / Doctor of Philosophy (PhD)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/28438 |
| Date | 03 1900 |
| Creators | Yang, Yuhang |
| Contributors | Emadi, Ali, Mechanical Engineering |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
| Type | Thesis |
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