We have used deep level transient spectroscopy (DLTS) to characterise four defects
with shallow levels in ZnO grown by pulsed laser deposition (PLD). These defects all have
DLTS peaks below 100 K. From DLTS measurements and Arrhenius plots we have calculated
the energy levels of these defects as 31 meV, 64 meV, 100 meV and 140 meV, respectively,
below the conduction band. The 100 meV defect displayed metastable behaviour: Annealing
under reverse bias at temperatures of above 130 K introduced it while annealing under zero
bias above 110 K removed it. The 64 meV and 140 meV defects exhibited a strong electric
field assisted emission, indicating that they may be donors.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:80084 |
| Date | 22 July 2022 |
| Creators | Auret, F.D., Meyer, W.E., Janse van Rensburg, P.J., Hayes, M., Nel, J.M., von Wenckstern, Holger, Hochmuth, Holger, Biehne, G., Lorenz, Michael, Grundmann, Marius |
| Publisher | IOP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 042038 |
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