In this thesis, we investigate the optical properties of m-plane InGaN/GaN multiple quantum well grown by metal organic vapor phase epitaxy. The optical spectroscopies we employed are photoluminescence (PL), polarized PL, power-dependent PL, photoluminescence excitation (PLE), polarized PLE, and Raman scattering.
From the blue shift of E2 mode in Raman spectrum, we find that the epitaxial layers are under compressive stress. The PL spectrum at 10 K is dominated by the emission band peaked at 433 nm. We found the optical emission possesses the polarization anisotropy. The degree of polarization is about 80% at room temperature. It is found that the degree of polarization decreases with increasing temperature, which may be explained by carrier population effect. In addition, two major contributions to the PLE spectrum detected for the emission band have identified.
Finally, the absence of quantum confined Stark effect is confirmed by power-dependent PL measurements.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902108-004008 |
| Date | 02 September 2008 |
| Creators | Lin, Jian-Lin |
| Contributors | Wei-Hung Su, Da-Ren Hang, Sheng-de Chao |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902108-004008 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0023 seconds