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Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3

We present X-ray diffraction and Raman spectroscopy investigations of a (100)-oriented
(AlxGa1–x)2O3 thin film on MgO (100) and bulk-like ceramics in dependence on their composition.
The thin film grown by pulsed laser deposition has a continuous lateral composition spread allowing
to determine precisely the dependence of the phonon mode properties and lattice parameters on
the chemical composition. For x<0.4, we observe the single-phase b-modification. Its lattice parameters
and phonon energies depend linearly on the composition. We determined the slopes of
these dependencies for the individual lattice parameters and for nine Raman lines, respectively.
While the lattice parameters of the ceramics follow Vegard’s rule, deviations are observed for the
thin film. This deviation has only a small effect on the phonon energies, which show a reasonably
good agreement between thin film and ceramics.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31222
Date14 August 2018
CreatorsKranert, Christian, Jenderka, Marcus, Lenzner, Jörg, Lorenz, Michael, von Wenckstern, Holger, Schmidt-Grund, Rüdiger, Grundmann, Marius
PublisherAmerican Institute of Physics, Universität Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation0021-8979, 1089-7550, 125703

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