Abstract¡G
We measured time-resolved PL of Zn1-XCdXSe epilayer and ZnSe/Zn0.91Cd0.09Se MQW by Upconversion experiment. The Zn1-XCdXSe epilayer was growth with four kind of Cadmium compositions (X=0.08¡B0.32¡B0.60 and 0.84). The thickness of the Zn1-XCdXSe epilayer is around 0.5£gm. The ZnSe/Zn0.91Cd0.09Se MQW of well width thickness varies from 5nm¡B10nm¡B15nm to 20nm . From carrier recombination mechanism ,We get the two sample relative temperature dependence of radiative¡Bnonradiative recombination lifetime and quantum efficiency , From nonradiative recombination lifetime formula , we can get trap concentration and capture cross section. At low temperature the two samples recombination process is dominated by radiative recombination process. The two samples increase nonradiative recombination process and decrease quantum efficiency with increasing temperature. At high temperature the two samples recombination process is dominated by nonradiative recombination process.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0624103-134454 |
| Date | 24 June 2003 |
| Creators | Lin, Chung-Sung |
| Contributors | I-Min Jiang, De-Jun Jang, Li-Wei Tu, Chie-Tong Kuo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624103-134454 |
| Rights | unrestricted, Copyright information available at source archive |
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