In this work, a highly linear broadband Low Noise Amplifier (LNA) is presented.
The linearity issue in broadband Radio Frequency (RF) front-end is introduced, followed
by an analysis of the specifications and requirements of a broadband LNA through
consideration of broadband, multi-standard front-end design. Metal-Oxide-
Semiconductor Field-Effect Transistor (MOSFET) non-linearity characteristics cause
linearity problems in the RF front-end system. To solve this problem, feedback and the
Derivative Superposition Method linearized MOSFET. In this work, novel linearization
approaches such as the constant current biasing and the Derivative Superposition
Method using a triode region transistor improve linearization stability against Process,
Supply Voltage, and Temperature (PVT) variations and increase high power input
capability. After analyzing and designing a resistive feedback LNA, novel linearization
methods were applied. A highly linear broadband LNA is designed and simulated in
65nm CMOS technology. Simulation results including PVT variation and the Monte
Carlo simulation are presented. We obtained -10dB S11, 9.77dB S21, and 4.63dB Noise
Figure with IIP3 of 19.18dBm for the designed LNA.
| Identifer | oai:union.ndltd.org:tamu.edu/oai:repository.tamu.edu:1969.1/ETD-TAMU-2009-08-827 |
| Date | 2009 August 1900 |
| Creators | Park, Joung Won |
| Contributors | Silva-Martinez, Jose |
| Source Sets | Texas A and M University |
| Language | en_US |
| Detected Language | English |
| Type | Book, Thesis, Electronic Thesis, text |
| Format | application/pdf |
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