Recently, the development of nonvolatile memory (NVM) is influence by scaling
down. When the device is miniaturized continuously, the tunnel oxide layer of the
floating gate will get thinner. In consequence the charges could leak into the substrate
and lead to loss all of stored information. In order to enhance the performance of the
non-volatility memory, the new generation non-volatile memories have been
developed. Advantages of the resistive random access memory (RRAM) are simple
structure, lower consumption of energy, higher operating speed and higher endurance.
RRAM might be expected to replace the memory of traditional floating gate. However,
the mechanisms of RRAM were controversial and more investigations were needed.
The aim of this study is to develop new material and theory by using the
insulator of GaOx and IGO (InGaOx, IGO). The bottom electrode (TiN) was deposited
on the substrate of Si2O3. The GaOx (300Å) and IGO (300Å) thin film were deposited
on the bottom electrode of TiN by Multi-Target Sputter. Then, the top electrode (Pt)
was deposited on the insulator. The sandwiched structure of Pt/GaOx/TiN and
Pt/IGO/TiN device was completed. Based on electrical measuring, the resistance
switching feature of Pt/GaOx/TiN is bipolar. The resistance switching features of
Pt/IGO/TiN are both bipolar and unipolar. The reliability of the device of
Pt/GaOx/TiN and Pt/IGO/TiN were maintained by retention at 85¢XC and 104 cycles
endurance. In order to study the device switching mechanisms, we measured the
resistance of the Rlow state and Rhigh state and observed the change of the resistance in
different temperature.
In the similar process, we sputter GaOx and IGO target with Ar gas mixes O2 gas,
in order to decrease the defect of thin film. By XPS analyzing, the thin film was stable
because the insulator sputter with Ar gas mixed O2 gas has sufficient oxygen. Based
on electrical measuring, the resistance switching of Pt/GaOx/TiN and Pt/IGO/TiN
which was sputter with Ar gas mixes O2 gas was stable.
We succeeded to find new material of RRAM which is GaOx and IGO. They
have the characteristics of stable resistance switching. Wide application of In and Ga
in modern optoelectronic semiconductor industry. These fabrication techniques can be
applied to the manufacture process of semiconductor industry.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0722110-155631 |
| Date | 22 July 2010 |
| Creators | Yang, Jyun-bao |
| Contributors | Ting-Chang Chang, Ann-Kuo Chu, Tsung-Ming Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722110-155631 |
| Rights | not_available, Copyright information available at source archive |
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