The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as it is stressed across bias, time and temperature.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/54315 |
| Date | 07 January 2016 |
| Creators | Raghunathan, Uppili Srinivasan |
| Contributors | Cressler, John D. |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
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