This paper presents design and fabrication of ring cavity semiconductor lasers with simple fabrication processes and good potential for integration. A 1.55-£gm symmetric quantum well InGaAsP epi-layer wafer is used to fabricate the lasers. The fabrication processes involve a bi-level deep etching to reduce the bending losses.
Two geometric types of ring cavity semiconductor lasers have been investigated. For the type 1 ring cavity in the form of race tracks, two different designs are presented. One has a single ring resonator (SRR) design and the other has a coupled double ring resonators (DRR) design. The resonator of the type 2 ring cavity is formed between a cleaved facet and a loop mirror. Both a single ring resonator (SRR) design and a double ring resonator (DRR) design are presented for this type of cavity also.
The maximum saturation output light powers of 0.479 and 0.409 mW are observed in room temperature L-I measurements for type 1 and type 2 ring cavity semiconductor lasers respectively.
The spontaneous emission spectra of the type 1 ring cavity semiconductor lasers show a red-shift phenomenon under increasing drive currents. The type 1 ring cavity semiconductor lasers with ring resonators of 100 and 200 £gm radii have also been found to exhibit an interesting wavelength clamping phenomenon of the output light.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0624103-221457 |
| Date | 24 June 2003 |
| Creators | Wang, Chun-Kai |
| Contributors | Tao-Yuan Chang, Yi-Jen Chiu, Wen-Jeng Ho, Ching-Ting Lee, Tsong-Sheng Lay |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624103-221457 |
| Rights | campus_withheld, Copyright information available at source archive |
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