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ABSTRACT A DIP (dual-in-line) laser diode module packaging by soldering technique was investigated. We made high coupling efficiency fiber lens under the best arc fusing conditions. The coupling efficiency of fiber lens was obtained 82%, while offset of fiber lens center was less than 0.5mm and curvature radius was about 9mm. We metallized the high coupling efficiency fiber lens, and packaged it in the DIP housing. The components inside the module were uncoated FP (Fabry-Perot) laser chip, p-i-n detector, substrate, and cooler. We made a package process as follows: 1) We utilized the heating apparatus to fix the FP laser, PIN detector, and thermistor on the substrate. 2) We utilized the heating apparatus to make the cooler fixed on the DIP housing and the substrate fixed on the cooler. 3) We utilized the electrothermal heating machine to melt 1.5mm3 indium wire and adjusted the fiber lens by tweezer to couple light into the fiber inside the DIP housing. We obtained the 2.93mW output power and 58.6% coupling efficiency after packaging. The post-soldering-shift resulted from the indium solidification was the most important factor affecting the coupling efficiency. By improving substrate design properly, we could reduce the indium quantity to minimize the solidification effect. The post-soldering-shift should be controlled below 1mm in the transverse axis and below 10 mm in the longitudinal axis, respectively. Finally, We achieved an external cavity fiber grating laser module with 2mW output power, and got an open eye pattern after measuring the DIP transmitter module.

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This paper presents design and fabrication of ring cavity semiconductor lasers with simple fabrication processes and good potential for integration. A 1.55-£gm symmetric quantum well InGaAsP epi-layer wafer is used to fabricate the lasers. The fabrication processes involve a bi-level deep etching to reduce the bending losses. Two geometric types of ring cavity semiconductor lasers have been investigated. For the type 1 ring cavity in the form of race tracks, two different designs are presented. One has a single ring resonator (SRR) design and the other has a coupled double ring resonators (DRR) design. The resonator of the type 2 ring cavity is formed between a cleaved facet and a loop mirror. Both a single ring resonator (SRR) design and a double ring resonator (DRR) design are presented for this type of cavity also. The maximum saturation output light powers of 0.479 and 0.409 mW are observed in room temperature L-I measurements for type 1 and type 2 ring cavity semiconductor lasers respectively. The spontaneous emission spectra of the type 1 ring cavity semiconductor lasers show a red-shift phenomenon under increasing drive currents. The type 1 ring cavity semiconductor lasers with ring resonators of 100 and 200 £gm radii have also been found to exhibit an interesting wavelength clamping phenomenon of the output light.

Significant technical barriers currently prevent the wide spread adoption of WGM lasers as building blocks in large-scale photonic integrated circuits. The first challenge is to reduce the electrical power consumption at desirable levels of light output power. The second target is to obtain directional light emission without sacrificing other laser performance metrics. The best opportunity for success lies in the pursuit of small micro-Pillar lasers with spiral-geometry cavities. Process technology has been demonstrated for making high-performance WGM lasers including a refined ICP etching process for fabricating micro-Pillar cavities with sidewall roughness less than 10 nm and a new hydrogenation based approach to achieving current blocking that is compatible with all other processing steps and robust in comparison with earlier reports. A comprehensive photo-mask has been designed that enables investigation of the interplay between device geometry and WGM laser performance. Emphasis has been placed on enabling experiments to determining the impact of diffraction and scattering losses, current and carrier confinement, and surface recombination on electrical/optical device characteristics. In addition, a methodology has been developed for separating out process optimization work from the task of identifying the best means for directional light out-coupling. Our device fabrication methods can be proven on WGM lasers with pure cylindrical symmetry, hence results from these experiments should be independent of any specific light output coupling scheme. Particular attention has been paid to the fact that device geometries that give the best performance for purely symmetrical cavities may not yield the highest level of light emission from the spiral output notch. Such considerations seem to be missing from much of the earlier work reported in the literature. Finally, our processing techniques and device designs have resulted in individual WGM lasers that outperform those made by competitors. These devices have been incorporated into multi-element, coupled-cavity optical circuits thereby laying the groundwork for construction of digital photonic gates that execute AND, OR, and NOT logic functions. / Ph. D.

Distributed Feedback (DFB) lasers and integrated laser arrays are of great importance in Wavelength-Division Multiplexing (WDM) systems in fiber optic communication systems. High-performance, low-cost DFB lasers and laser arrays are highly desirable for applications in intra-datacenter transport and in local access networks. This dissertation is focused on the design, fabrication and achievement of high-performance, low-cost DFB Lasers and Integrated DFB Arrays for WDM Systems. It investigates the use of a novel sampled grating approach, called the equivalent phase shift method, to achieve integrated DFB laser arrays with single-mode lasing at uniformly-spaced and precisely-positioned wavelengths. First, laterally-Coupled DFB (LC-DFB) lasers with first-order sidewall gratings are realized, with gratings fabricated by optical interference lithography instead of e-beam. Then, LC-DFB lasers and LC-DFB laser arrays with sampled gratings and equivalent phase shifts are proposed, numerically analyzed and experimentally demonstrated. Each LC-DFB laser with an equivalent quarter-wave phase shift is shown to lase at the pre-specified wavelength in a single longitudinal mode, with good side-mode suppression ratio (SMSR) over a very wide range of injection currents. Integrated LC-DFB laser arrays with five uniformly-spaced wavelength channels are demonstrated, in close agreement with the design. For better performance, buried heterostructure (BH)-DFB laser and laser arrays are also demonstrated using the same sampled-grating technology. A 6-wavelenth laser array with a 300 μm cavity length and a 8-wavelength laser array with 250 μm cavity length are successively demonstrated, each showing precisely positioned lasing wavelengths, good SMSR, and uniformly good lasing characteristics under a wide range of operating currents and temperatures. Finally, it is demonstrated that the wavelength of a monolithic WDM laser array can be continuously tuned over a very wide wavelength range of nearly 40 nm. The proposed method offers a practical and cost-effective solution for the manufacture of high-performance, monolithic multi-wavelength DFB laser arrays as well as widely wavelength-tunable DFB lasers for integrated WDM systems.

Vertical External Cavity Surface Emitting Lasers (VECSELs) have become well established in recent years for their design flexibility and promising power scalability. Recent efforts in VECSEL development have focused heavily on expanding the medium into the ultrafast regime of modelocked operation. Presented in this thesis is a detailed discussion regarding the development of ultrafast VECSEL devices. Achievements in continuous wave (CW) operation will be highlighted, followed by several chapters detailing the engineering challenges and design solutions which enable modelocked operation of VECSELs in the ultrafast regime, including the design of the saturable absorbers used to enforce modelocking, management of the net group delay dispersion (GDD) inside the cavity, and the design of the active region to support pulse durations on the order of 100 fs. Work involving specific applications - VECSELs emitting on multiple wavelengths simultaneously and the use of VECSEL seed oscillators for amplification and spectral broadening - will also be presented. Key experimental results will include a novel multi-fold cavity design that produced record-setting peak powers of 6.3 kW from a modelocked VECSEL, an octave-spanning supercontinuum with an average power of 2 W generated using a VECSEL seed and a 2-stage Yb fiber amplifier, and two separate experiments where a VECSEL was made to emit on multiple wavelengths simultaneously in modelocked and highly stable CW operation, respectively. Further, many diagnostic and characterization measurements will be presented, most notably the in-situ probing of a VECSEL gain medium during stable modelocked operation with temporal resolution on the order of 100 fs, but also including characterization of the relaxation rates in different saturable absorber designs and the effectiveness of different methods for managing the net GDD of a device.