Return to search

Fabrication and Measurement of Semiconductor Optical Amplifiers¡BFabry-Perot Laser and Ring Cavity Filter

In this thesis, we have established an optical measurement system to measure the device characteristics. We focus on the investigation of semiconductor optical amplifier, Fabry-Perot laser, and ring cavity filter. We used InP-based multiple quantum wells epitaxial wafer with modulation doping in the active layer. A 1.41 £gm symmetric InGaAlAs/InP quantum well structure is used to fabricate the optical waveguide ring resonator devices for the optical communication region at 1.55£gm wavelength.
For the semiconductor optical amplifier and lasers, we designed two different types: Fabry-Perot Amplifier (FPA), and Traveling Wave Amplifier (TWA). The InGaAlAs-FPA structure has three lasing peaks at 1514 nm, 1528 nm, and 1544 nm. The InGaAlAs-TWA-a structure has only one peak at 1510 nm. The InGaAsP-TWA-b structure has a gross gain = 8.5 dB (wavelength = 1575 nm) at pumping current = 22 mA. We used Hakki-Paoli method and transparency current to calculate gain spectrum. For ring cavity filter, the optical spectrum has a FSR = 41.25 GHz.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0709107-121743
Date09 July 2007
CreatorsLin, Shin-Hung
ContributorsFow-Sen Choa, Kuo-Jui Lin, Yi-Jen Chiu, Woo-Hi Cheng, Tsong-Sheng Lay2
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709107-121743
Rightsnot_available, Copyright information available at source archive

Page generated in 0.0019 seconds