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The main work of this thesis is to design the TE-polarized SOA structures for booster amplifier, and the polarization-independent SOA structures for preamplifier at receiver end. In the SOA structure, we add a lattice-matched ternary compound InGaAs as an extra quantum well in separate-confinement heterostructure (SCH) layer. The purpose is to result in the band-filling/shrinkage and lead to change the absorption coefficient. Therefore, the refractive index change will be increased, and the structure can work as a Mach-Zehnder interferometer under reverse bias. We also added an electron barrier InAlAs layer to reduce the carriers accumulation in the extra InGaAs QW. After the epitaxy of MOCVD, this designed structure was processed to be a ridge laser. From the measurements of ridge laser, the barrier InAlAs could not efficiently stop the carrier injection into the extra InGaAs QW. The other part of this thesis is to set up a digital signal apparatus to analyze the RHEED pattern on the screen of the chamber. We make a connection between CCD camera and PC utilizing the framegrabber in RHEED system, and develop the programs from LabVIEW and IMAQ to obtain the functions we need. Further, from the tests of grabing and analysis for RHEED pattern, the digital signal system on RHEED pattern has been successfully demonstrated.

In this thesis, we have established an optical measurement system to measure the device characteristics. We focus on the investigation of semiconductor optical amplifier, Fabry-Perot laser, and ring cavity filter. We used InP-based multiple quantum wells epitaxial wafer with modulation doping in the active layer. A 1.41 £gm symmetric InGaAlAs/InP quantum well structure is used to fabricate the optical waveguide ring resonator devices for the optical communication region at 1.55£gm wavelength. For the semiconductor optical amplifier and lasers, we designed two different types: Fabry-Perot Amplifier (FPA), and Traveling Wave Amplifier (TWA). The InGaAlAs-FPA structure has three lasing peaks at 1514 nm, 1528 nm, and 1544 nm. The InGaAlAs-TWA-a structure has only one peak at 1510 nm. The InGaAsP-TWA-b structure has a gross gain = 8.5 dB (wavelength = 1575 nm) at pumping current = 22 mA. We used Hakki-Paoli method and transparency current to calculate gain spectrum. For ring cavity filter, the optical spectrum has a FSR = 41.25 GHz.

How can we evaluate and design integrated photonic circuit performance systematically? Can active photonic circuits be controlled for optimized performance? This work uses control theory to analyze, design, and optimize photonic integrated circuits based on versatile semiconductor optical amplifiers (SOAs). Control theory provides a mathematically robust set of tools for system analysis, design, and control. Although control theory is a rich and well-developed field, its application to the analysis and design of photonic circuits is not widespread. Following control theoretic methods already used for fibreline systems we derive three interrelated state-space models: a core photonic model, a photonic model with gain compression, and a equivalent circuit optoelectronic model. We validate each model and calibrate the gain compression model by pump/probe experiments. We then linearize the state-space models to design and analyze SOA controllers. We apply each linearized model to proof-of-concept SOA control applications such as suppressing interchannel crosstalk and regulating output power. We demonstrate the power of linearized state-space models in controller design and stability analysis. To illustrate the importance of using the complete equivalent circuit model in controller design, we demonstrate an intuitive bias-current controller that fails due to the dynamics of the intervening parasitic circuitry of the SOA. We use the linearized state-space models to map a relationship between feedback delay and controller strength for stable operation, and demonstrate that SOAs pose unusual control difficulties due to their ultrafast dynamics. Finally, we leverage the linearized models to design a novel and successful hybrid controller that uses one SOA to control another via feedback (for reliability) and feedforward (for speed) control. The feedback controller takes full advantage of the equivalent circuit modelling by sampling the voltage of the controlled SOA and using the error to drive the bias current of the controller SOA. Filtering in the feedback path is specified by transfer function analysis. The feedforward design uses a novel application of the linearized models to set the controller bias points correctly. The modelling and design framework we develop is entirely general and opens the way to the robust optoelectronic control of integrated photonic circuits.

How can we evaluate and design integrated photonic circuit performance systematically? Can active photonic circuits be controlled for optimized performance? This work uses control theory to analyze, design, and optimize photonic integrated circuits based on versatile semiconductor optical amplifiers (SOAs). Control theory provides a mathematically robust set of tools for system analysis, design, and control. Although control theory is a rich and well-developed field, its application to the analysis and design of photonic circuits is not widespread. Following control theoretic methods already used for fibreline systems we derive three interrelated state-space models: a core photonic model, a photonic model with gain compression, and a equivalent circuit optoelectronic model. We validate each model and calibrate the gain compression model by pump/probe experiments. We then linearize the state-space models to design and analyze SOA controllers. We apply each linearized model to proof-of-concept SOA control applications such as suppressing interchannel crosstalk and regulating output power. We demonstrate the power of linearized state-space models in controller design and stability analysis. To illustrate the importance of using the complete equivalent circuit model in controller design, we demonstrate an intuitive bias-current controller that fails due to the dynamics of the intervening parasitic circuitry of the SOA. We use the linearized state-space models to map a relationship between feedback delay and controller strength for stable operation, and demonstrate that SOAs pose unusual control difficulties due to their ultrafast dynamics. Finally, we leverage the linearized models to design a novel and successful hybrid controller that uses one SOA to control another via feedback (for reliability) and feedforward (for speed) control. The feedback controller takes full advantage of the equivalent circuit modelling by sampling the voltage of the controlled SOA and using the error to drive the bias current of the controller SOA. Filtering in the feedback path is specified by transfer function analysis. The feedforward design uses a novel application of the linearized models to set the controller bias points correctly. The modelling and design framework we develop is entirely general and opens the way to the robust optoelectronic control of integrated photonic circuits.

This thesis puts focus on the technological challenges for Wavelength Division Multiplexed Passive Optical Network (WDM-PON) implementation, and presents novel semiconductor optical devices for deployment at the optical network unit (ONU). The first-ever reported L-band Reflective semiconductor optical amplifier (RSOA) is presented based on InP-base material. A theoretical model is developed to estimate the optical gain and the saturation power of this device compared to a conventional SOA. Experiments on this device design show long-range telecom wavelength operation, with polarization-independent gain of greater than 20 dB, and low saturation output power of 0 dBm suitable for PON applications. Next, the effect of the amplified spontaneous emission noise of RSOA devices on WDM-PON system is investigated. It is shown through theoretical modeling and simulations that the RSOA noise combined with receiver noise statistics increase probability of error, and induce considerable power penalties to the WDM-PON system. By improving the coupling efficiencies, and by distributing more current flow to the input of these devices, steps can be taken to improve device noise characteristics. Further, in spectrally-spliced WDM-PONs deploying RSOAs, the effect of AWG filter shape on system performance is investigated. Simulation modeling and experiments show that deployment of Flat-band AWGs is critical for reducing the probability of error caused by AWG spectral shape filtering. Flat-band athermal AWGs in comparison to Gaussin-shape counterparts satisfy the maximum acceptable error probability requirements, and reduce the power penalty associated with filtering effect. In addition, detuning between two AWG center wavelengths impose further power penalties to the WDM-PON system. In the last section of this thesis, motivated by RSOA device system limitations, a novel injection-locked Fabry-Perot (IL-FP) device is presented which consists of a gain section monolithically integrated with a phase section. The gain section provides locking of one FP mode to a seed source wavelength, while the phase modulator allows for adjusting the wavelength of the internal modes by tuning bias current to maintain mode-locking. This device counters any mode drifts caused by temperature variations, and allows for cooler-less operation over a wide range of currents. The devices and the performance metrics subsequently allow for a hybrid integration platform on a silicon substrate and integrate many functionalities like reflective modulator with thin film dielectric filter and receiver on a single chip for deployment at the user-end of future-proof low cost WDM-PONs.

This thesis puts focus on the technological challenges for Wavelength Division Multiplexed Passive Optical Network (WDM-PON) implementation, and presents novel semiconductor optical devices for deployment at the optical network unit (ONU). The first-ever reported L-band Reflective semiconductor optical amplifier (RSOA) is presented based on InP-base material. A theoretical model is developed to estimate the optical gain and the saturation power of this device compared to a conventional SOA. Experiments on this device design show long-range telecom wavelength operation, with polarization-independent gain of greater than 20 dB, and low saturation output power of 0 dBm suitable for PON applications. Next, the effect of the amplified spontaneous emission noise of RSOA devices on WDM-PON system is investigated. It is shown through theoretical modeling and simulations that the RSOA noise combined with receiver noise statistics increase probability of error, and induce considerable power penalties to the WDM-PON system. By improving the coupling efficiencies, and by distributing more current flow to the input of these devices, steps can be taken to improve device noise characteristics. Further, in spectrally-spliced WDM-PONs deploying RSOAs, the effect of AWG filter shape on system performance is investigated. Simulation modeling and experiments show that deployment of Flat-band AWGs is critical for reducing the probability of error caused by AWG spectral shape filtering. Flat-band athermal AWGs in comparison to Gaussin-shape counterparts satisfy the maximum acceptable error probability requirements, and reduce the power penalty associated with filtering effect. In addition, detuning between two AWG center wavelengths impose further power penalties to the WDM-PON system. In the last section of this thesis, motivated by RSOA device system limitations, a novel injection-locked Fabry-Perot (IL-FP) device is presented which consists of a gain section monolithically integrated with a phase section. The gain section provides locking of one FP mode to a seed source wavelength, while the phase modulator allows for adjusting the wavelength of the internal modes by tuning bias current to maintain mode-locking. This device counters any mode drifts caused by temperature variations, and allows for cooler-less operation over a wide range of currents. The devices and the performance metrics subsequently allow for a hybrid integration platform on a silicon substrate and integrate many functionalities like reflective modulator with thin film dielectric filter and receiver on a single chip for deployment at the user-end of future-proof low cost WDM-PONs.

Οι απαιτήσεις των δικτύων διασύνδεσης, στα υπολογιστικά συστήματα υψηλής απόδοσης, αυξάνονται με αλματώδη ρυθμό τόσο σε χωρητικότητα, όσο και σε ρυθμούς σηματοδοσίας που πρέπει να εξυπηρετηθούν. Αυτή η αύξηση των ρυθμών σηματοδοσίας επιβάλλει την αντικατάσταση των ηλεκτρικών διακοπτών που χρησιμοποιούνται μέχρι τώρα, από τους οπτικούς. Η τεχνολογία των οπτικών ινών παρουσιάζει σημαντικά πλεονεκτήματα για τέτοιες εφαρμογές διότι επιτρέπει τη μετάδοση σε μεγαλύτερες αποστάσεις, παρέχει ευρυζωνικότητα, είναι πιο ανθεκτική στην ηλεκτρομαγνητική παρεμβολή, και μπορεί να είναι πιο συμφέρουσα ενεργειακά, κάτι που εξαρτάται από το ρυθμό σηματοδοσίας και το μήκος της ζεύξης. Σε αυτή την κατεύθυνση, αυτή η διδακτορική διατριβή αποσκοπεί στο σχεδιασμό και την επίδειξη οικονομικά συμφέροντων, υψηλής διεκπαιρεωτικής ικανότητας, οπτικών δικτύων διασύνδεσης ικρυωμάτων για τα exascale (10^18 Flops) υπολογιστικά συστήματα υψηλής απόδοσης και τα κέντρα δεδομένων. Ειδικότερα, μελετάται μία πρωτότυπη, οικονομικά βελτιστοποιημένη, αρχιτεκτονική ενός αμιγώς οπτικού δικτύου διασύνδεσης η οποία χρησιμοποιεί οπτικούς ημιαγωγικούς ενισχυτές για να επιτελέσει τη μεταγωγή. Αυτή η προτεινόμενη, οικονομικότερη εκδοχή του υπο μελέτη N×N αμιγώς οπτικού, ραβδεπαφικού διακόπτη, χρησιμοποιεί ένα μειωμένο αριθμό απαιτούμενων πυλών ON/OFF. Στην παρούσα διατριβή η προτεινόμενη αρχιτεκτονική συγκρίνεται με την αρχικά προταθείσα και αποδεικνύεται η εξίσου καλή λειτουργία της με την πρώτη, τόσο θεωρητικά όσο και πειραματικά. Επιπλέον, για την αύξηση της χωρητικότητας και παράλληλα για την καταπολέμηση των φαινομένων μετάδοσης στο δίκτυο διασύνδεσης (ιδιαίτερα της αυτοδιαμόρφωσης και ετεροδιαμόρφωσης της απολαβής (SGM και XGM), της αυτοδιαμόρφωσης και ετεροδιαμόρφωσης της φάσης (SPM και XPM), και της εξάρτησης της απολαβής από την πόλωση (PDG)), μελετώνται, εκτός από την τεχνική διαμόρφωσης πλάτους με άμεσης φώραση (IM/DD), διάφορες προηγμένες τεχνικές διαμόρφωσης όπως η διαφορική διαμόρφωση φάσης (DPSK) με άμεση φώραση, η διαμόρφωση με ορθογώνια πολυπλεξία συχνότητας (OFDM) με άμεση φώραση, καθώς και μελλοντικά υποψήφιες τεχνικές διαμόρφωσης, για τέτοια είδους δίκτυα, όπως η τετραδική διαμόρφωση φάσης με πολυπλεξία της πόλωσης (PDM-QPSK), και η δεκαεξαδική διαμόρφωση φάσης και πλάτους (16QAM) χωρίς (SP) και με (PDM) πολυπλεξία της πόλωσης, με σύμφωνη φώραση. Τέλος, ως δεύτερη ερευνητική δραστηριότητα, μελετώνται ζεύξεις σημείου-προς-σημείο, που βασίζονται στη χρήση πομπών κάθετης κοιλότητας επιφανειακής εκπομπής (VCSELs) και πολύτροπες (MMF) ή μονότροπες (SMF) ίνες, σε συνδυασμό με συμβατικές τεχνικές διαμόρφωσης, όπως η ΙΜ/DD, και προηγμένες, όπως η διαμόρφωση πλάτους τεσσάρων επιπέδων (4-PAM), και η OFDM διαμόρφωση. Η χρήση των παραπάνω τεχνολογιών επιτρέπει την αύξηση της χωρητικότητας και τη μείωση του κόστους στα τρέχοντα συστήματα οπτικής διασύνδεσης. / Data rates are continuing to increase for box-to-box, rack-to-rack, board-to-board, and chip-to-chip interconnects for terabit switches and routers, multiprocessor computers and high-end servers. The increase in individual line rates and bandwidth drives the need to replace copper interconnects with optical interconnects. Fiber optics are advantageous for these applications because they allow for longer link lengths, increased bandwidth, smaller cables and connectors, less susceptibility to electromagnetic interference, and potentially lower power dissipation, depending on the data rate and link length. Towards this direction, this thesis aims to design and demonstrate low-cost, low-latency, high throughput, rack-to-rack optical interconnect architectures for exascale (i.e., performing 10^18 floating point operations per second) high-performance computing (HPC) systems and data centers. In particular, a novel, cost-effective, optical interconnect architecture for ultrafast optical switching, based on semiconductor optical amplifiers (SOAs), is studied. The proposed design of a fast N×N all-optical, wavelength-space crossbar switch for optical interconnects uses a minimum number of ON/OFF gates. This thesis compares and proves the superiority of the proposed architecture with respect to its originally-proposed counterpart, both theoretically and experimentally. Additionally, in order to increase the capacity and to minimize the impact of transmission effects (especially self-gain modulation (SGM), cross-gain modulation (XGM), self-phase modulation (SPM), cross-phase modulation (XPM), and polarization dependent gain (PDG)), we investigate the performance of conventional binary intensity modulation (IM), in conjunction with direct detection, as well as of advanced, more resilient, spectrally-efficient modulation formats (e.g., Differential Phase Shift Keying (DPSK), Orthogonal Frequency Division Multiplexing (OFDM), Polarization Division Multiplexed Quadrature Phase Shift Keying (PDM-QPSK), Single (SP)- and PDM- 16-ary Quadrature Amplitude Modulation (16QAM) in conjunction with coherent detection). Finally, as a seperate research activity, we study the performance of point-to-point links based on vertical-cavity surface-emitting lasers (VCSELs) and single- or multi- mode fibers, in conjuction with IM/DD, four-level Pulse Amplitude Modulation (4-PAM), and OFDM, to enable state-of-the-art, high-capacity, low-cost optical interconnects.

Ce travail porte sur la conception, la fabrication et la caractérisation d’un photorécepteur cohérent en filière PIC InP pour les applications 100-400 Gbit/s. La solution retenue est un récepteur cohérent pré-amplifié par un SOA pour permettre d’améliorer la responsivité du récepteur par rapport à un récepteur cohérent classique. De plus, ce récepteur est réalisé en technologie enterrée pour permettre un fonctionnement sur une plus grande gamme de longueurs d’onde. Enfin, un récepteur cohérent non pré-amplifié est aussi réalisé pour pouvoir évaluer l’impact de l’intégration du SOA sur le fonctionnement de notre récepteur. La première partie de cette étude est consacrée à des rappels sur les transmissions optiques à très haut débit, à un état de l’art sur les récepteurs cohérents, à une présentation des différents photodétecteurs et à une présentation de l’hybrid 90° qui est le composant coeur des récepteurs cohérents. Dans un second temps, nous présentons les différents choix retenus pour la conception de notre récepteur. L’étude de deux hybrid 90° simulés en technologie ridge et en technologie enterrée est détaillée. Nous commentons également le choix des photodiodes ainsi que le choix du SOA utilisé pour notre composant. Le troisième chapitre est consacré aux différentes étapes technologiques permettant la fabrication de notre récepteur cohérent pré amplifié. Nous commençons par une description des différentes techniques d’épitaxie utilisées. Ensuite, nous présentons en détails les 22 étapes technologiques nécessaires pour réaliser notre récepteur. Enfin, nous regroupons l’ensemble des caractérisations réalisées sur notre récepteur cohérent. Après un rappel sur les différentes parties de celui-ci et de leurs performances clés, nous caractérisons les composants unitaires formant notre récepteur (mixeur cohérent, photodiodes UTC et SOA). Enfin nous présentons les caractéristiques statiques et dynamiques de notre récepteur et nous comparons ses performances avec celles de l’état de l’art. Ces travaux de thèse ont permis de démontrer la faisabilité d’un récepteur pré-amplifié utilisant un SOA intégré en technologie InP enterrée avec un record de responsivité de 5 A/W. Ceci représente un gain de 12,5 dB par rapport à un récepteur cohérent non amplifié idéal et un gain de 15,5 dB par rapport à l’état de l’art des récepteurs cohérents. De plus, la consommation engendrée par cette intégration reste très faible (240 mW). Enfin, nous avons démontré une démodulation à 32 Gbauds avec un facteur Q de 14 dB. La bande passante de 40 GHz de nos diodes est compatible avec des applications à 56 Gbauds et peut être améliorée pour des applications à 100 Gbauds en réduisant la taille des photodiodes. Ce travail de thèse ouvre donc le chemin pour de nouveaux récepteurs pré-amplifés par un SOA pour des applications à 400 Gbit/s / This work focuses on the design, manufacturing and characterization of a coherent photoreceptor in PiC InP for 100-400 Gbit/s applications. The chosen solution is a preamplified coherent receiver with an SOA to improve the responsivity compared to a conventional coherent receiver. In addition, this receiver is made in buried technology to allow operation over a wider range of wavelengths. Finally, a coherent receiver without SOA is also produced to be able to evaluate its impact on the performances of our receiver. The first part of this study is devoted to reminders about very high speed optical transmissions, about state of the art on coherent receivers, about a presentation of the different photodetectors and a presentation of the 90° hybrid which is the core component in coherent receivers. Secondly, we present the various choices made for the design of our receiver. The study of two 90° hybrids simulated in ridge or in buried technology is detailed. We also comment the choices of photodiodes and SOA used for our component. The third chapter is devoted to the different technological steps used to build our preamplified receiver. We start with a description of the different epitaxial techniques used. Then, we present in detail the 22 technological steps required to realize our receiver. Finally, we group all the characterizations preformed on our coherent receiver. We characterize the unitary components of our receiver (hybrid 90°, UTC photodiodes and SOA). Finally we present the static and dynamic characteristics of our receiver and we compare its performances with the state of the art. This thesis demonstrates the feasibility of a preamplified receiver using a SOA in buried InP technology with a record of reponsivity of 5 A/W. This represents a gain of 12.5 dB compared to an ideal coherent receiver and a gain of 15,5 dB compared to the state of the art. In addition, the consumption generated by this integration remains very low (240 mW). Finally, we have demonstrated a 32 Gbauds demodulation with a Q factor of 14dB and the 40 GHz bandwidth of our photodiodes is compatible with 56 Gbauds applications. It can be improved for 100 Gbauds applications by reducing the size of our photodiodes. This thesis opens the way for a new preamplified coherent receiver for 400 Gbit/s applications

This thesis reports an experimental characterization of the ultrafast gain and refractive index dynamics of a novel InAs/InGaAsP/InP quantum-dot (QD) semiconductor optical amplifier (SOA) operating near 1.55-µm wavelengths, assessing its high-speed performance characteristics for the first time. The thesis also studies the influence of the degree of quantum confinement on the dynamics of SOAs by comparing the zero-dimensional (0-D) QD's dynamics to those in 1-D InAs/InAlGaAs/InP quantum-dash (QDash), and 2-D InGaAsP/InGaAsP/InP quantum-well (QW) SOAs, both of which also operate near 1.55-µm wavelengths, and are made with matching or similar materials and structures. The ultrafast (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the SOAs are characterized via advanced heterodyne pump-probe measurements with 150-femtosecond resolution. It is found that the QD SOA has an 80-picosecond amplitude, and 110-picosecond phase recovery lifetime in the gain regime, 4-6 times faster than the QDash and QW recovery lifetimes, as well as reduced ultrafast transients, giving it the best properties for high-speed (> 100 Gb/s) all-optical signal processing in the important telecommunications wavelength bands. An impulse response model is developed and used to analyze the dynamics, facilitating a comparison of the gain compression factors, time-resolved linewidth enhancement factors (alpha-factors), and instantaneous dynamic coefficients (two-photon absorption and nonlinear refractive-index coefficients) amongst the three structures. The quantum-dot device is found to have the lowest effective alpha-factor, 2-10, compared to 8-16 in the QW, as well as time-resolved alpha-factors lower than in the QW—promising for reduced-phase-transient operation at high bitrates. Significant differences in the alpha-factors of lasers with the same structure are found, due to the differences between gain changes that are induced optically or through the electrical bias. The relative contributions of stimulated transitions and free-carrier absorption to the total carrier heating dynamics in SOAs of varying dimensionality are also reported for the first time. Examining the QD electroluminescence and linear gain spectra in combination with the carrier dynamics also brings about conclusions on the nature of the quantum confinement, dot energy-level structure, and density of states—aspects of the material that have not been previously well understood.