In this thesis, we have established an optical measurement system to measure the device characteristics. We focus on the investigation of semiconductor optical amplifier, Fabry-Perot laser, and ring cavity filter. We used InP-based multiple quantum wells epitaxial wafer with modulation doping in the active layer. A 1.41 £gm symmetric InGaAlAs/InP quantum well structure is used to fabricate the optical waveguide ring resonator devices for the optical communication region at 1.55£gm wavelength.
For the semiconductor optical amplifier and lasers, we designed two different types: Fabry-Perot Amplifier (FPA), and Traveling Wave Amplifier (TWA). The InGaAlAs-FPA structure has three lasing peaks at 1514 nm, 1528 nm, and 1544 nm. The InGaAlAs-TWA-a structure has only one peak at 1510 nm. The InGaAsP-TWA-b structure has a gross gain = 8.5 dB (wavelength = 1575 nm) at pumping current = 22 mA. We used Hakki-Paoli method and transparency current to calculate gain spectrum. For ring cavity filter, the optical spectrum has a FSR = 41.25 GHz.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0709107-121743 |
| Date | 09 July 2007 |
| Creators | Lin, Shin-Hung |
| Contributors | Fow-Sen Choa, Kuo-Jui Lin, Yi-Jen Chiu, Woo-Hi Cheng, Tsong-Sheng Lay2 |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709107-121743 |
| Rights | not_available, Copyright information available at source archive |
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