A highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming using DC bias and AC pulse response in the 50ns regime demonstrate good potential for high-speed, low-energy nonvolatile memory. Nano-sphere deposition, oxygen-plasma isolation, and nano-pillar formation by deep-Si-etching are studied and optimized for the 1D-1R configurations. Excellent electrical performance, data retention and the potential for wafer-scale integration are promising for future non-volatile memory applications. / text
| Identifer | oai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/26200 |
| Date | 30 September 2014 |
| Creators | Ji, Li, active 21st century |
| Source Sets | University of Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
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