Since the traditional CRT(Cathode Ray Tube) replaced by FPD(Flat Panel Display), e.g. LCD¡BOLED¡BPDP, FPD industry is regarded as the important one of global industry following Semi-conductor industry. The main stream of Large-Area Displays is TFT-LCD(Thin Film Transistor-Liquid Crystal Display) and it¡¦s applied a-Si:H TFT (the hydrogenated Amorphous Silicon Thin Film Transistor) as pixel-switch device on LCD.
In a-Si:H TFT Cell process, the active region material(a-Si:H) with higher Photoconductivity results into higher off-state current under light illumination and that causes color performance discrepancy as incomplete On/Off operation of pixel-switch devices. As long as the introduction of F into a-Si:H modify the density of states in the gap of a-Si:H(:F), that may result the shift of the Fermi level toward the valence band edge and The density-of-states increasing. It¡¦s effective to decrease the photo leakage current.
Due to electro-optical properties of liquid crystal(LC), to drive Pixel-switch device in TFT-LCD shall force On/Off voltage to change Twist Angle of LC is corresponding to have Stress on TFT device. According to DC Stress experiment results, it¡¦s found TFT device with SiF4 dopant can reach better reliability.
This issue is aimed to research the photo leakage current variation of a-Si:H TFT at low temperature and ON/Off state effect by stress on TFT device.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0122108-203151 |
| Date | 22 January 2008 |
| Creators | Huang, Chinh-mei |
| Contributors | Cheng-Tung Huang, An-Kuo Chu, Ting-Chang Chang, Jung-Fang Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-203151 |
| Rights | unrestricted, Copyright information available at source archive |
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