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OPTICAL PROPERTIES OF RADIATION DAMAGED SILICON-CARBIDE

The reflectivity of crystalline and radiation-damaged silicon carbide and silicon has been measured in the 2-12 eV spectral region. Measurements were made using a standard Seya-Namioka Monochrometer which was modified to compensate for the fluctuations of the light source and interfaced to a micro-computer to facilitate data collection. The reflectivities of crystalline silicon carbide polytypes 6H, 15R, and 4H were found to be similar and the reflectivity of 3C-SiC showed agreement with the predictions of published band structure calculations. The observed reflectivity of radiation damage SiC agreed with the prediction of a simple model which takes into account the breakdown of k(→) -conservation and uses a realistic Bethe-lattice Hamiltonian to calculate the amorphous valence density of electron states.

Identiferoai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/282581
Date January 1980
CreatorsBallart, Ralph
ContributorsYoung, Richard
PublisherThe University of Arizona.
Source SetsUniversity of Arizona
Languageen_US
Detected LanguageEnglish
Typetext, Dissertation-Reproduction (electronic)
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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