This thesis evaluate the state of art ROHM SCT3080KR silicon carbide mosfet in a synchronous buck converter. The converter was using the ROHM P02SCT3040KR-EVK-001 evaluation board for driving the mosfets in a half bridge configuration. Evaluation of efficiency, waveforms, temperature and a theoretical comparison between a silicon mosfet (STW12N120K5) is done. For the efficiency test the converter operate at 200 V input voltage and 100 V output voltage at output currents of 7 A to 12 A, this operation was tested at switching frequencies of 50 kHz, 80 kHz and 100 kHz. The result of the efficiency test showed an efficiency of 98-97 % for 50 kHz, 97.7-96.4 % for 80 kHz and 97-96.2 % for the 100 kHz test. The temperature test shows a small difference in comparison of the best case scenario and the worst case scenario, temperature ranges from 25.5 to 33.5 °C for the high side mosfet while the low side mosfet temperature ranges from 29.8 to 35 °C. The waveform test was conducted at 50 kHz and 100 kHz for output currents of 4 A and 12 A (at 200 V input and 100 V output). The result of the waveform test shows a rise and fall time of the voltages in range of 10-12 ns while the current rise and fall time was 16 ns for the 4 A test and 20 ns for the 12 A test. Overall SiC mosfet show a clear advantage over silicon mosfet in terms of efficiency and high power capabilities.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:uu-415147 |
| Date | January 2020 |
| Creators | Al Kzair, Christian |
| Publisher | Uppsala universitet, Elektricitetslära |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | UPTEC E, 1654-7616 ; 20018 |
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