Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
Identifer | oai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd-4348 |
Date | 01 January 2007 |
Creators | Shunmugavelu, Arun Kumar |
Publisher | University of Central Florida |
Source Sets | University of Central Florida |
Language | English |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | Electronic Theses and Dissertations |
Page generated in 0.0012 seconds