Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for the scaling down devices. However, all of the charges stored in the floating gate will leak into the substrate if the tunnel oxide has a leakage path in the conventional NVMs. Therefore, the tunnel oxide thickness is difficult to scale down in terms of charge retention and endurance. The nanocrystal nonvolatile memories are one of promising substitution, because the discrete storage nodes as the charge storage media have been effectively improve data retention under endurance test for the scaling down device. Many methods have been developed recently for the formation of nanocrystals. Generally, most methods need thermal treatment with high temperature and long duration. This procedure will influence thermal budget and throughput in current manufacture technology of semiconductor industry. And supercritical carbon dioxide (SCCO2) has been researched to the passivation of dielectric and reducing the activation energy. The research estimates SCCO2 is potential to form nanocrystals for these reason.
This research is to discuss the feasibility of fabricating nanocrystal NVMs device with low temperature SCCO2. The low melting point metal material Sn is used for the attempts. In order to check if Sn can be used for fabricating nanocrystal NVMs device, the research selects the conventional thermal annealing method first. It uses rapid thermal annealing to improve the crystalline of nanocrystals and reliability of the memory device. Compare to different Sn containment or chemistry and different process, analyze the electric characteristics and materials chemistry.
At last, select the Sn and SiO2 co-sputtering film to try the SCCO2 process and analyze these characteristics as well. Due to the novel technology, many physical mechanism and improvement of properties will be discuss following.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0626109-115027 |
| Date | 26 June 2009 |
| Creators | Chen, Chao-Yu |
| Contributors | Chien-Hsiang Chao, Tsung-Ming Tsai, Ting-Chang Chang, Tai-Fa Young, Tsung-Ming Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626109-115027 |
| Rights | not_available, Copyright information available at source archive |
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