Return to search

Deposition of SnO2 thin films as gas sensor by EAVD method

Electrostatic Assisted Vapor Deposition method was adopted to deposit SnO2 thin films in this work using either SnCl4 or DBTDC (C12H24O4Sn) as precursors. Appropriate deposition parameters were identified for deposition of porous and dense films . A post-deposition calcination of 600¢XC/2h yielded well crystalline rutile phase. Electrical resistance measurement indicated that the most porous films ,derived from the precursor solution of ethanol solvent, were not continuous. Instead, films derived from precursor solution of mixed ethanol-carbitol solvent were less porous allowing stable resistance values to be measured. A detection sensitivity of 2.55 for 100ppm CO gas was obtained from films derived from a 30% ethanol-70% carbitol solution. A higher sensitivity of 6.55 was obtained from films derived from solutions containing Di-n-butyltin diacetate (DBTDC) as precursor.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0110106-161217
Date10 January 2006
CreatorsKe, Jih-Hung
ContributorsTzu-Chien Hsu, Bing-Hwai Hwang, Hong-Yang Lu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0110106-161217
Rightsunrestricted, Copyright information available at source archive

Page generated in 0.002 seconds