Indium-antimonide films have been prepared for experiments involving the application of high electric fields to this semiconducting material. The films have been deposited onto a mica substrate. To obtain high mobilities, a multilayer construction with subsequent annealing was used.
Measurements of the complex propagation coefficient of a section of waveguide containing the film have been made and the results agree closely with a numerical solution of a theoretical model proposed for the structure.
The design of a new type of a pulse generator for these high electric field experiments is described. / Thesis / Master of Engineering (ME)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/25565 |
| Date | 05 1900 |
| Creators | Chan, Tony |
| Contributors | Gunn, M.W., Electrical Engineering |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
| Type | Thesis |
Page generated in 0.0019 seconds